Instability of 4H-SiC MOSFET characteristics due to interface traps with long time constants

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 603-606

  Yano, Hiroshi ^a   Oshiro, Yuki ^a   Okamoto, Dai ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

C face; Hysteresis; Instability; MOSFET; Near interface trap; Nitridation; Pulse I V; Threshold voltage

Indexed keywords

ALUMINUM NITRIDE; HYSTERESIS; METALS; MOS DEVICES; NITRIDATION; OXIDE SEMICONDUCTORS; PLASMA STABILITY; SILICON CARBIDE; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS;

COOLING DOWN PROCESS; INTERFACE TRAPS; LARGE HYSTERESIS; MOS-FET; PULSE CURRENTS; PULSE I-V; TIME CONSTANTS; TRANSIENT CURRENT;

MOSFET DEVICES;

EID: 79955087029     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.603     Document Type: Conference Paper

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