Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 521-524

  Noll, Stefan ^a   Scholten, Dick ^a   Grieb, Michael ^a   Bauer, Anton J ^b   Frey, Lothar ^b,c  

^a ROBERT BOSCH GMBH   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

4H SiC lateral silicon carbide transistors; Negative bias stress; Post implant annealing influence

Indexed keywords

ALUMINUM; ANNEALING; BIAS VOLTAGE; MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

4H-SIC MOSFET; ANNEALING TEMPERATURES; IMPLANT ANNEALING; INTERFACE TRAPS; MOSFET TRANSISTORS; NEGATIVE BIAS; NEGATIVE STRESS; POST-IMPLANT ANNEALING;

SILICON CARBIDE;

EID: 84874085701     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.521     Document Type: Conference Paper

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