Application of reliability test standards to SiC Power MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Green, Ronald ^a   Lelis, Aivars ^a   Habersat, Daniel ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

BTS; HTGB; oxide traps; Power MOSFETs; SiC; VT instability

Indexed keywords

BTS; HTGB; OXIDE TRAPS; POWER MOSFETS; SIC;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; LEAKAGE CURRENTS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

MOSFET DEVICES;

EID: 79959304683     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784573     Document Type: Conference Paper

References (10)

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