Extraction of trapped charge in 4H-SiC metal oxide semiconductor field effect transistors from subthreshold characteristics

Applied Physics Letters

Volumn 99, Issue 2, 2011, Pages

  Dasgupta, Sandeepan ^a   Brock, Reinhard ^a   Kaplar, Robert ^a   Marinella, Matthew ^a   Smith, Mark ^a   Atcitty, Stanley ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE STRESS; ELEVATED TEMPERATURE; INTERFACE TRAPS; IV CHARACTERISTICS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MINIMAL ERRORS; NEAR BAND EDGE; OXIDE TRAPPED CHARGE; SUB-THRESHOLD CURRENT; SUBTHRESHOLD; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SLOPE; TRAPPED CHARGE;

DEGRADATION; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSISTORS; VANADIUM;

FIELD EFFECT TRANSISTORS;

EID: 79960499329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3611029     Document Type: Article

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