Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors

Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

  Taillon, Joshua A ^a   Hyuk Yang, Joon ^a   Ahyi, Claude A ^b   Rozen, John ^c   Williams, John R ^b   Feldman, Leonard C ^c   Zheleva, Tsvetanka S ^d   Lelis, Aivars J ^d   Salamanca Riba, Lourdes G ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b AUBURN UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC/SIO; CHANNEL MOBILITY; CHEMICAL CHARACTERIZATION; INTERFACE TRAP DENSITY; INTERFACIAL REGION; INVERSE RELATIONSHIP; METAL-OXIDE; N DENSITIES; POST ANNEALING; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SPATIALLY RESOLVED; STRUCTURAL CHARACTERIZATION; SYSTEMATIC METHOD; TRANSITION LAYERS;

CHEMICAL BONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; MOSFET DEVICES; NITRIC OXIDE; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 84873678803     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789924     Document Type: Article

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