Temperature-dependence of SiC MOSFET threshold-voltage instability

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 807-810

  Lelis, A J ^a   Habersat, D ^a   Green, R ^a   Goldsman, N ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

MOSFET reliability; Oxide charge; Threshold voltage instability

Indexed keywords

BIAS VOLTAGE; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; STABILITY; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS;

GATE BIAS; INCREASING TEMPERATURES; INTERFACIAL CHARGE; METALOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR RELIABILITY; METALOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; OXIDE CHARGE; SOURCE PROCESS; TEMPERATURE DEPENDENCE; THRESHOLD-VOLTAGE INSTABILITIES; TRANSISTOR RELIABILITY;

SILICON CARBIDE;

EID: 63849231714     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.807     Document Type: Conference Paper

References (4)

1. N.S. Saks, S.S. Mani, A.K. Agarwal, and V.S. Hegde: Mater. Sci. Forum Vol. 338-342 (2000), p. 737.
2. S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, and J. McGarrity: J. Appl. Phys., Vol. 100 (2006) article 044516.
3. A.J. Lelis, D. Habersat, G. Lopez, J.M. McGarrity, F.B. McLean, and N. Goldsman: Mater. Sci. Forum Vol. 527-529 (2006) p. 1317.
4. A. Lelis, D. Habersat, F. Olaniran, B. Simons, J. McGarrity, F.B. McLean, and N. Goldsman: Mater. Res. Soc. Symp. Proc., Vol. 911 (2006) article 0911-B13-05.