SCOPUS 정보 검색 플랫폼

Springer Series in Advanced Microelectronics

Volumn 27, Issue , 2007, Pages 211-228

Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case

(2) Stesmans, A a Afanas'ev V V a

a UNIVERSITY OF LEUVEN (Belgium)

Author keywords

Electron Spin Resonance; Electron Spin Resonance Signal; Interface Trap; Point Defect; Trap Density

Indexed keywords

EID: 84982810772 PISSN: 14370387 EISSN: 21976643 Source Type: Book Series
DOI: 10.1007/978-3-540-71491-0_9 Document Type: Chapter

Times cited : (4)

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