Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Journal of Non-Crystalline Solids

Volumn 351, Issue 21-23, 2005, Pages 1902-1905

  Houssa, M ^a   De Jaeger, B ^a   Delabie, A ^a   Van Elshocht, S ^a   Afanas'ev, V V ^b   Autran, J L ^c   Stesmans, A ^b   Meuris, M ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DENSITY (SPECIFIC GRAVITY); ELECTRON TUNNELING; GERMANIUM COMPOUNDS; MOS DEVICES; STACKING FAULTS; SURFACES;

ELECTRICAL CHARACTERISTICS; FREQUENCY DISPERSIONS; MOS STRUCTURES; TUNNELING EFFECT;

GATES (TRANSISTOR);

EID: 21144441566     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.04.035     Document Type: Conference Paper

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