MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

Semiconductor Science and Technology

Volumn 29, Issue 10, 2014, Pages

  Shenoy, Rohit S ^a   Burr, Geoffrey W ^a   Virwani, Kumar ^a   Jackson, Bryan ^a   Padilla, Alvaro ^a   Narayanan, Pritish ^a   Rettner, Charles T ^a   Shelby, Robert M ^a   Bethune, Donald S ^a   Raman, Karthik V ^b   Brightsky, Matthew ^c   Joseph, Eric ^c   Rice, Philip M ^a   Topuria, Teya ^a   Kellock, Andrew J ^a   Kurdi, Bülent ^a   Gopalakrishnan, Kailash ^c  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM RESEARCH INDIA   (India)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

access devices; memristive devices; MIEC; nonvolatile memory

Indexed keywords

CIRCUIT SIMULATION; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; NONVOLATILE STORAGE; PHASE CHANGE MEMORY; PROCESSING; RANDOM ACCESS STORAGE; SILICON WAFERS; SINGLE CRYSTALS; TEMPERATURE; THREE DIMENSIONAL INTEGRATED CIRCUITS;

ACCESS DEVICES; FRONT END OF THE LINES; HIGH PROCESSING TEMPERATURES; LOW PROCESSING TEMPERATURE; MEMRISTIVE DEVICES; MIEC; MIXED IONIC-ELECTRONIC CONDUCTION; NON-VOLATILE MEMORY;

MEMRISTORS;

EID: 84907202556     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/10/104005     Document Type: Review

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