RRAM crossbar array with cell selection device: A device and circuit interaction study

IEEE Transactions on Electron Devices

Volumn 60, Issue 2, 2013, Pages 719-726

  Deng, Yexin ^a   Huang, Peng ^a   Chen, Bing ^a   Yang, Xiaolin ^a   Gao, Bin ^a   Wang, Juncheng ^a   Zeng, Lang ^a   Du, Gang ^a   Kang, Jinfeng ^a   Liu, Xiaoyan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Crossbar; leakage path; memory array; nonlinearity; readout margin; resistive random access memory (RRAM); selection device; selector

Indexed keywords

CROSSBAR; LEAKAGE PATHS; MEMORY ARRAY; READOUT MARGIN; RESISTIVE RANDOM ACCESS MEMORY; SELECTION DEVICE; SELECTOR;

CONTROL NONLINEARITIES; ELECTRON DEVICES; ELECTRONICS ENGINEERING;

RANDOM ACCESS STORAGE;

EID: 84872848395     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2231683     Document Type: Article

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