Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Burr, G W ^a   Virwani, K ^a   Shenoy, R S ^a   Fraczak, G ^b   Rettner, C T ^a   Padilla, A ^a   King, R S ^a   Nguyen, K ^a   Bowers, A N ^a   Jurich, M ^a   Brightsky, M ^b   Joseph, E A ^b   Kellock, A J ^a   Arellano, N ^a   Kurdi, B N ^a   Gopalakrishnan, K ^b  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Access device; MIEC; MRAM; NVM; PCM; RRAM

Indexed keywords

ACCESS DEVICES; MIEC; MRAM; NVM; RRAM;

MRAM DEVICES; PULSE CODE MODULATION; RANDOM ACCESS STORAGE; THREE DIMENSIONAL;

MAGNETIC STORAGE;

EID: 84883405139     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K. Gopalakrishnan et al., VLSI 2010, T19-4 (2010).
2. R. Shenoy et al., VLSI 2011, T5B-1 (2011).
3. G. W. Burr et al., VLSI Tech. Symp., T5.4 (2012).
4. K. Virwani et al., IEDM Tech. Digest, 2.7 (2012).