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Japanese Journal of Applied Physics

Volumn 53, Issue 3 SPEC. ISSUE 2, 2014, Pages

Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors

(4) Eriguchi, Koji a Matsuda, Asahiko a Takao, Yoshinori a Ono, Kouichi a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; ION BOMBARDMENT; MOLECULAR DYNAMICS; MOSFET DEVICES; RANDOM PROCESSES; SILICON;

INCIDENT ENERGY; LATERAL DIRECTIONS; LAYER GENERATION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOLECULAR DYNAMICS SIMULATIONS; PHYSICAL DAMAGES; PLASMA-INDUCED DAMAGE; VERTICAL DIRECTION;

FINS (HEAT EXCHANGE);

EID: 84903161097 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.53.03DE02 Document Type: Article

Times cited : (37)

References (61)

1
- 38049037353
- K. Eriguchi and K. Ono, J. Phys. D 41, 024002 (2008).
- (2008) J. Phys. , vol.D 41 , pp. 024002
- Eriguchi, K.¹ Ono, K.²

2
- 0004223704
- Springer Heidelberg
- K. P. Cheung, Plasma Charging Damage (Springer, Heidelberg, 2001).
- (2001) Plasma Charging Damage
- Cheung, K.P.¹

3
- 0007554604
- W. M. Greene, J. B. Kruger, and G. Kooi, J. Vac. Sci. Technol. B 9, 366 (1991).
- (1991) J. Vac. Sci Technol. , vol.B 9 , pp. 366
- Greene, W.M.¹ Kruger, J.B.² Kooi, G.³

4
- 0028207697
- K. Eriguchi, Y. Uraoka, H. Nakagawa, T. Tamaki, M. Kubota, and N. Nomura, Jpn. J. Appl. Phys. 33, 83 (1994).
- (1994) Jpn. J. Appl Phys. , vol.33 , pp. 83
- Eriguchi, K.¹ Uraoka, Y.² Nakagawa, H.³ Tamaki, T.⁴ Kubota, M.⁵ Nomura, N.⁶

5
- 77952705223
- K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, and K. Ono, Jpn. J. Appl. Phys. 49, 04DA18 (2010).
- (2010) Jpn. J. Appl Phys. , vol.49
- Eriguchi, K.¹ Nakakubo, Y.² Matsuda, A.³ Kamei, M.⁴ Takao, Y.⁵ Ono, K.⁶

6
- 0343701654
- T. Yunogami and T. Mizutani, J. Appl. Phys. 73, 8184 (1993).
- (1993) J. Appl Phys. , vol.73 , pp. 8184
- Yunogami, T.¹ Mizutani, T.²

7
- 0942267562
- M. Okigawa, Y. Ishikawa, and S. Samukawa, J. Vac. Sci. Technol. B 21, 2448 (2003).
- (2003) J. Vac. Sci Technol. , vol.B 21 , pp. 2448
- Okigawa, M.¹ Ishikawa, Y.² Samukawa, S.³

8
- 85047696531
- N. Yabumoto, M. Oshima, O. Michikami, and S. Yoshii, Jpn. J. Appl. Phys. 20, 893 (1981).
- (1981) Jpn. J. Appl Phys. , vol.20 , pp. 893
- Yabumoto, N.¹ Oshima, M.² Michikami, O.³ Yoshii, S.⁴

9
- 0032277568
- K. Egashira, K. Eriguchi, and S. Hashimoto, IEDM Tech. Dig., 1998, p. 563.
- (1998) IEDM Tech Dig. , pp. 563
- Egashira, K.¹ Eriguchi, K.² Hashimoto, S.³

10
- 0242593743
- S. A. Vitale and B. A. Smith, J. Vac. Sci. Technol. B 21, 2205 (2003).
- (2003) J. Vac. Sci. Technol. , vol.B 21 , pp. 2205
- Vitale, S.A.¹ Smith, B.A.²

11
- 55149083507
- T. Ohchi, S. Kobayashi, M. Fukasawa, K. Kugimiya, T. Kinoshita, T. Takizawa, S. Hamaguchi, Y. Kamide, and T. Tatsumi, Jpn. J. Appl. Phys. 47, 5324 (2008).
- (2008) Jpn. J. Appl Phys. , vol.47 , pp. 5324
- Ohchi, T.¹ Kobayashi, S.² Fukasawa, M.³ Kugimiya, K.⁴ Kinoshita, T.⁵ Takizawa, T.⁶ Hamaguchi, S.⁷ Kamide, Y.⁸ Tatsumi, T.⁹

12
- 77958098374
- K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, and K. Ono, Jpn. J. Appl. Phys. 49, 08JC02 (2010).
- (2010) Jpn. J. Appl Phys. , vol.49
- Eriguchi, K.¹ Nakakubo, Y.² Matsuda, A.³ Kamei, M.⁴ Takao, Y.⁵ Ono, K.⁶

13
- 77958100579
- Y. Nakakubo, A. Matsuda, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, and K. Ono, Jpn. J. Appl. Phys. 49, 08JD02 (2010).
- (2010) Jpn. J. Appl. Phys. , vol.49
- Nakakubo, Y.¹ Matsuda, A.² Fukasawa, M.³ Takao, Y.⁴ Tatsumi, T.⁵ Eriguchi, K.⁶ Ono, K.⁷

14
- 0002949082
- H. Wada, M. Agata, K. Eriguchi, A. Fujimoto, T. Kanashima, and M. Okuyama, J. Appl. Phys. 88, 2336 (2000).
- (2000) J. Appl Phys. , vol.88 , pp. 2336
- Wada, H.¹ Agata, M.² Eriguchi, K.³ Fujimoto, A.⁴ Kanashima, T.⁵ Okuyama, M.⁶

15
- 70549110008
- K. Eriguchi, Y. Nakakubo, A. Matsuda, Y. Takao, and K. Ono, IEEE Electron Device Lett. 30, 1275 (2009).
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1275
- Eriguchi, K.¹ Nakakubo, Y.² Matsuda, A.³ Takao, Y.⁴ Ono, K.⁵

16
- 67650421492
- K. Eriguchi, A. Matsuda, Y. Nakakubo, M. Kamei, H. Ohta, and K. Ono, IEEE Electron Device Lett. 30, 712 (2009).
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 712
- Eriguchi, K.¹ Matsuda, A.² Nakakubo, Y.³ Kamei, M.⁴ Ohta, H.⁵ Ono, K.⁶

17
- 77955597364
- K. Eriguchi, M. Kamei, Y. Takao, and K. Ono, Proc. Int. Conf. Integrated Circuit Design and Technology, 2010, p. 94.
- (2010) Proc. Int. Conf Integrated Circuit Design and Technology , pp. 94
- Eriguchi, K.¹ Kamei, M.² Takao, Y.³ Ono, K.⁴

18
- 79960524702
- K. Eriguchi, Y. Nakakubo, A. Matsuda, Y. Takao, and K. Ono, Jpn. J. Appl. Phys. 49, 056203 (2010).
- (2010) Jpn. J. Appl Phys. , vol.49 , pp. 056203
- Eriguchi, K.¹ Nakakubo, Y.² Matsuda, A.³ Takao, Y.⁴ Ono, K.⁵

19
- 0003675250
- Wiley, Hoboken, NJ 2nd ed
- S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, Hoboken, NJ, 2002) 2nd ed.
- (2002) Semiconductor Devices Physics and Technology
- Sze, S.M.¹

20
- 0003679027
- McGraw-Hill New York 2nd ed
- S. M. Sze, VLSI Technology McGraw-Hill New York 1988 2nd ed.
- (1988) VLSI Technology
- Sze, S.M.¹

21
- 81555220119
- I. Ferain, C. A. Colinge, and J.-P. Colinge, Nature 479, 310 (2011).
- (2011) Nature , vol.479 , Issue.310
- Ferain, I.¹ Colinge, C.A.² Colinge, J.-P.³

22
- 84862652741
- K. J. Kuhn, IEEE Trans. Electron Devices 59, 1813 (2012).
- (2012) IEEE Trans Electron Devices , vol.59 , pp. 1813
- Kuhn, K.J.¹

23
- 84866526723
- C. Auth, C. Allen, A. Blattner, D. Bergstrom, M. Brazier, M. Bost, M. Buehler, V. Chikarmane, T. Ghani, T. Glassman, R. Grover, W. Han, D. Hanken, M. Hattendorf, P. Hentges, R. Heussner, J. Hicks, D. Ingerly, P. Jain, S. Jaloviar, R. James, D. Jones, J. Jopling, S. Joshi, C. Kenyon, H. Liu, R. McFadden, B. Mcintyre, J. Neirynck, C. Parker, L. Pipes, I. Post, S. Pradhan, M. Prince, S. Ramey, T. Reynolds, J. Roesler, J. Sandford, J. Seiple, P. Smith, C. Thomas, D. Towner, T. Troeger, C. Weber, P. Yashar , K. Zawadzki, and K. Mistry, Symp. VLSI Technology Dig. Tech. Pap., 2012, p. 131.
- (2012) Symp. VLSI Technology Dig. Tech Pap. , pp. 131
- Auth, C.¹ Allen, C.² Blattner, A.³ Bergstrom, D.⁴ Brazier, M.⁵ Bost, M.⁶ Buehler, M.⁷ Chikarmane, V.⁸ Ghani, T.⁹ Glassman, T.¹⁰ Grover, R.¹¹ Han, W.¹² Hanken, D.¹³ Hattendorf, M.¹⁴ Hentges, P.¹⁵ Heussner, R.¹⁶ Hicks, J.¹⁷ Ingerly, D.¹⁸ Jain, P.¹⁹ Jaloviar, S.²⁰ more..

24
- 84871392447
- N. Seifert, B. Gill, S. Jahinuzzaman, J. Basile, V. Ambrose, Q. Shi, R. Allmon, and A. Bramnik, IEEE Trans. Nucl. Sci. 59, 2666 (2012).
- (2012) IEEE Trans. Nucl. Sci. , vol.59 , pp. 2666
- Seifert, N.¹ Gill, B.² Jahinuzzaman, S.³ Basile, J.⁴ Ambrose, V.⁵ Shi, Q.⁶ Allmon, R.⁷ Bramnik, A.⁸

25
- 84872106571
- E. Karl, Y. Wang, Y.-G. Ng, Z. Guo, F. Hamzaoglu, M. Meterelliyoz, J. Keane, U. Bhattacharya, K. Zhang, K. Mistry, and M. Bohr, IEEE J. Solid-State Circuits 48, 150 (2013).
- (2013) IEEE J Solid-State Circuits , vol.48 , Issue.150
- Karl, E.¹ Wang, Y.² Ng, Y.-G.³ Guo, Z.⁴ Hamzaoglu, F.⁵ Meterelliyoz, M.⁶ Keane, J.⁷ Bhattacharya, U.⁸ Zhang, K.⁹ Mistry, K.¹⁰ Bohr, M.¹¹

26
- 84889416744
- Wiley, New York 2nd ed
- M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005) 2nd ed.
- (2005) Principles of Plasma Discharges and Materials Processing
- Lieberman, M.A.¹ Lichtenberg, A.J.²

27
- 84865257704
- H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono, Jpn. J. Appl. Phys. 51, 08HC01 (2012).
- (2012) Jpn. J. Appl Phys. , vol.51
- Tsuda, H.¹ Takao, Y.² Eriguchi, K.³ Ono, K.⁴

28
- 0003164278
- N. Bohr, K. Dans. Vidensk. Selsk. Mat. Fys. Medd. 18, 1 (1948).
- (1948) Vidensk. Selsk. Mat. Fys. Medd. , vol.18 , pp. 1
- Bohr, N.¹ Dans, K.²

29
- 0001892452
- J. Lindhard, M. Scharff, and H. E. Schiott, K. Dans. Vidensk. Selsk. Mat. Fys. Medd. 33, 1 (1963).
- (1963) Vidensk. Selsk. Mat. Fys. Medd. , vol.33 , pp. 1
- Lindhard, J.¹ Scharff, M.² Schiott, H.E.³ Dans, K.⁴

30
- 84902954732
- J. F. Gibbons, Proc. IEEE 56, 295 (1968).
- (1968) Proc. IEEE , vol.56 , pp. 295
- Gibbons, J.F.¹

31
- 0037797035
- J. P. Biersack, Z. Phys. A 211, 495 (1968).
- (1968) Z. Phys. , vol.A 211 , pp. 495
- Biersack, J.P.¹

32
- 3342921020
- T. Tsurushima and H. Tanoue, J. Phys. Soc. Jpn. 31, 1695 (1971).
- (1971) J. Phys. Soc Jpn. , vol.31 , pp. 1695
- Tsurushima, T.¹ Tanoue, H.²

33
- 0346003810
- J. F. Gibbons, Proc. IEEE 60, 1062 (1972).
- (1972) Proc. IEEE , vol.60 , pp. 1062
- Gibbons, J.F.¹

34
- 0003576507
- Prentice Hall, Upper Saddle River, NJ
- J. D. Plummer, M. Deal, and P. B. Griffin, Silicon VLSI Technology, Fundamentals, Practice and Modeling (Prentice Hall, Upper Saddle River, NJ, 2000).
- (2000) Silicon VLSI Technology, Fundamentals, Practice and Modeling
- Plummer, J.D.¹ Deal, M.² Griffin, P.B.³

35
- 0003412161
- Pergamon New York
- J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985) Vol. 1.
- (1985) The Stopping and Ranges of Ions in Solids , vol.1
- Ziegler, J.F.¹ Biersack, J.P.² Littmark, U.³

36
- 0004165928
- McGraw-Hill New York
- C. Y. Chang and S. M. Sze, ULSI Technology (McGraw-Hill, New York, 1996).
- (1996) ULSI Technology
- Chang, C.Y.¹ Sze, S.M.²

37
- 80051975557
- K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, and K. Ono, Jpn. J. Appl. Phys. 50, 08KD04 (2011).
- (2011) Jpn. J. Appl Phys. , vol.50
- Eriguchi, K.¹ Nakakubo, Y.² Matsuda, A.³ Kamei, M.⁴ Takao, Y.⁵ Ono, K.⁶

38
- 36149019570
- J. Lindhard and M. Scharff, Phys. Rev. 124, 128 (1961).
- (1961) Phys. Rev. , vol.124 , pp. 128
- Lindhard, J.¹ Scharff, M.²

39
- 0000699238
- S. Furukawa, H. Matsumura, and H. Ishiwara, Jpn. J. Appl. Phys. 11, 134 (1972).
- (1972) Jpn. J. Appl Phys. , vol.11 , pp. 134
- Furukawa, S.¹ Matsumura, H.² Ishiwara, H.³

40
- 34548135181
- W. D. Wilson, L. G. Haggmark, and J. P. Biersack, Phys. Rev. B 15, 2458 (1977).
- (1977) Phys. Rev. , vol.B 15 , pp. 2458
- Wilson, W.D.¹ Haggmark, L.G.² Biersack, J.P.³

41
- 4243754961
- F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985).
- (1985) Phys. Rev. , vol.B 31 , pp. 5262
- Stillinger, F.H.¹ Weber, T.A.²

42
- 0035441755
- H. Ohta and S. Hamaguchi, J. Vac. Sci. Technol. A 19, 2373 (2001).
- (2001) J. Vac. Sci Technol. , vol.A 19 , pp. 2373
- Ohta, H.¹ Hamaguchi, S.²

43
- 60849137230
- H. Ohta, T. Nagaoka, K. Eriguchi, and K. Ono, Jpn. J. Appl. Phys. 48, 020225 (2009).
- (2009) Jpn. J. Appl Phys. , vol.48 , pp. 020225
- Ohta, H.¹ Nagaoka, T.² Eriguchi, K.³ Ono, K.⁴

44
- 54049085752
- H. Ohta, A. Iwakawa, K. Eriguchi, and K. Ono, J. Appl. Phys. 104, 073302 (2008).
- (2008) J. Appl Phys. , vol.104 , pp. 073302
- Ohta, H.¹ Iwakawa, A.² Eriguchi, K.³ Ono, K.⁴

45
- 0142047697
- I. P. Batra, F. F. Abraham, and S. Ciraci, Phys. Rev. B 35, 9552 (1987).
- (1987) Phys. Rev. , vol.B 35 , pp. 9552
- Batra, I.P.¹ Abraham, F.F.² Ciraci, S.³

46
- 5844305504
- G. A. Baraff, E. O. Kane, and M. Schlüter, Phys. Rev. B 21, 5662 (1980).
- (1980) Phys. Rev. , vol.B 21 , pp. 5662
- Baraff, G.A.¹ Kane, E.O.² Schlüter, M.³

47
- 0016101673
- L.-J. Cheng and J. W. Corbett, Proc. IEEE 62, 1208 (1974).
- (1974) Proc. IEEE , vol.62 , pp. 1208
- Cheng, L.-J.¹ Corbett, J.W.²

48
- 0000928030
- S. K. Estreicher, J. L. Hastings, and P. A. Fedders, Appl. Phys. Lett. 70, 432 (1997).
- (1997) Appl. Phys. Lett. , vol.70 , pp. 432
- Estreicher, S.K.¹ Hastings, J.L.² Fedders, P.A.³

49
- 0001731494
- J. L. Hastings, S. K. Estreicher, and P. A. Fedders, Phys. Rev. B 56, 10215 (1997).
- (1997) Phys. Rev. , vol.B 56 , pp. 10215
- Hastings, J.L.¹ Estreicher, S.K.² Fedders, P.A.³

50
- 3342965087
- W.-K. Leung, R. J. Nee ds, G. Rajagopal, S. Itoh, and S. Ihara, Phys. Rev. Lett. 83, 2351 (1999).
- (1999) Phys. Rev Lett. , vol.83 , pp. 2351
- Leung, W.-K.¹ Needs, R.J.² Rajagopal, G.³ Itoh, S.⁴ Ihara, S.⁵

51
- 0000842024
- H. R. Schober, Phys. Rev. B 39, 13013 (1989).
- (1989) Phys. Rev. , vol.B 39 , pp. 13013
- Schober, H.R.¹

52
- 0001051163
- M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B 55, 14279 (1997).
- (1997) Phys. Rev. , vol.B 55 , pp. 14279
- Tang, M.¹ Colombo, L.² Zhu, J.³ De La Rubia, T.D.⁴

53
- 0036038830
- L. Colombo, Annu. Rev. Mater. Res. 32, 271 (2002).
- (2002) Annu. Rev. Mater. Res. , vol.32 , pp. 271
- Colombo, L.¹

54
- 33745257027
- P. A. Schultz, Phys. Rev. Lett. 96, 246401 (2006).
- (2006) Phys. Rev. Lett. , vol.96 , pp. 246401
- Schultz, P.A.¹

55
- 0031277387
- M. Koyama, C. W. Cheong, K. Yokoyama, and I. Ohdomari, Jpn. J. Appl. Phys. 36, 6682 (1997).
- (1997) Jpn. J. Appl Phys. , vol.36 , pp. 6682
- Koyama, M.¹ Cheong, C.W.² Yokoyama, K.³ Ohdomari, I.⁴

56
- 67650361136
- K. Eriguchi, Y. Nakakubo, A . Matsuda, M. Kamei, H. Ohta, H. Nakagawa, S. Hayashi, S. Noda, K. Ishikawa, M. Yoshimaru, and K. Ono, IEDM Tech. Dig., 2008, p. 443.
- (2008) IEDM Tech Dig. , pp. 443
- Eriguchi, K.¹ Nakakubo, Y.² Matsuda, A.³ Kamei, M.⁴ Ohta, H.⁵ Nakagawa, H.⁶ Hayashi, S.⁷ Noda, S.⁸ Ishikawa, K.⁹ Yoshimaru, M.¹⁰ Ono, K.¹¹

57
- 0001337035
- J. Tarus, K. Nordlund, A. Kuronen, and J. Keinonen, Phys. Rev. B 58, 9907 (1998).
- (1998) Phys. Rev. , vol.B 58 , pp. 9907
- Tarus, J.¹ Nordlund, K.² Kuronen, A.³ Keinonen, J.⁴

58
- 0014465023
- P. Sigmund, Appl. Phys. Lett. 14, 114 (1969).
- (1969) Appl. Phys. Lett. , vol.14 , pp. 114
- Sigmund, P.¹

59
- 79960551857
- M. Fukasawa, Y. Nakakubo, A. Matsuda, Y. Takao, K. Eriguchi, K. Ono, M. Minami, F. Uesawa, and T. Tatsumi, J. Vac. Sci. Technol. A 29, 041301 (2011).
- (2011) J. Vac. Sci Technol. , vol.A 29 , pp. 041301
- Fukasawa, M.¹ Nakakubo, Y.² Matsuda, A.³ Takao, Y.⁴ Eriguchi, K.⁵ Ono, K.⁶ Minami, M.⁷ Uesawa, F.⁸ Tatsumi, T.⁹

60
- 84903175862
- Y. Nakakubo, A. Matsuda, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, and K. Ono, AVS 59th Int. Symp. Exhib., 2012, PS-MoM10.
- (2012) AVS 59th Int. Symp. Exhib.
- Nakakubo, Y.¹ Matsuda, A.² Fukasawa, M.³ Takao, Y.⁴ Tatsumi, T.⁵ Eriguchi, K.⁶ Ono, K.⁷

61
- 84903160298
- A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, and K. Ono, Proc. Symp. Dry Process, 2012, p. 181.
- (2012) Proc. Symp Dry Process , pp. 181
- Matsuda, A.¹ Nakakubo, Y.² Fukasawa, M.³ Takao, Y.⁴ Tatsumi, T.⁵ Eriguchi, K.⁶ Ono, K.⁷

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