An interatomic potential model for molecular dynamics simulation of silicon etching by Br+ -containing plasmas

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Ohta, H ^a,b   Iwakawa, A ^a   Eriguchi, K ^a   Ono, K ^a  

^a KYOTO UNIVERSITY   (Japan)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MOLECULAR DYNAMICS; PLASMAS; QUANTUM CHEMISTRY; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON;

AB INITIO; CHEMICAL CALCULATIONS; CLASSICAL MOLECULAR DYNAMICS; INTERATOMIC POTENTIAL MODELS; MODEL PARAMETERS; MOLECULAR DYNAMICS SIMULATIONS; MONOENERGETIC; NONLINEAR FITTINGS; PARAMETER FITTINGS; POTENTIAL FUNCTIONS; REACTION DYNAMICS; SI ETCHINGS; SI(100) SURFACE; SILICON ETCHINGS; SIMULATION RESULTS;

DYNAMICS;

EID: 54049085752     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990070     Document Type: Article

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