Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices

Journal of Physics D: Applied Physics

Volumn 41, Issue 2, 2008, Pages

  Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATE DIELECTRICS; ION BOMBARDMENT; PLASMA APPLICATIONS; SPECTROSCOPIC ELLIPSOMETRY; SURFACE DEFECTS;

DIELECTRIC THICKNESS; ION BOMBARDMENT DAMAGE; PHOTOREFLECTANCE SPECTROSCOPY; PLASMA CONDUCTION CURRENT;

MOS DEVICES;

EID: 38049037353     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/2/024002     Document Type: Article

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