Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs

2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010

Volumn , Issue , 2010, Pages 94-97

  Eriguchi, Koji ^a   Kamei, Masayuki ^a   Takao, Yoshinori ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Device simulation; Gate length; Plasma induced damage; Recess structure; Subthreshold leakage; Threshold voltage

Indexed keywords

DEVICE SIMULATIONS; GATE LENGTH; PLASMA-INDUCED DAMAGE; RECESS STRUCTURE; SUB-THRESHOLD LEAKAGE;

HIGH ENERGY PHYSICS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; ION BOMBARDMENT; IONS; MODELS; MOSFET DEVICES; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

LEAKAGE CURRENTS;

EID: 77955597364     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2010.5510280     Document Type: Conference Paper

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