Modeling and simulation of nanoscale surface rippling during plasma etching of Si under oblique ion incidence

Japanese Journal of Applied Physics

Volumn 51, Issue 8 PART 2, 2012, Pages

  Tsuda, Hirotaka ^a   Takao, Yoshinori ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CELLULAR MODEL; ETCHED SURFACE; FLUX RATIO; HIGH DENSITY PLASMAS; INCIDENT ANGLES; INCIDENT ENERGY; ION TRAJECTORIES; LINE EDGE ROUGHNESS; MODELING AND SIMULATION; NANO SCALE; NANO-METER SCALE; NANO-SCALE SURFACES; NUMERICAL APPROACHES; NUMERICAL RESULTS; OBLIQUE INCIDENCE; PLASMA ENVIRONMENTS; RIPPLE STRUCTURE; ROUGHENED SURFACES; SURFACE-ROUGHENING;

ACCIDENTS; IONS; NANOTECHNOLOGY; PLASMA ETCHING; ROUGHNESS MEASUREMENT; SILICON; THREE DIMENSIONAL;

SURFACE ROUGHNESS;

EID: 84865257704     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.08HC01     Document Type: Article

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