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Volumn 55, Issue 21, 1997, Pages 14279-14289

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

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EID: 0001051163     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.14279     Document Type: Article
Times cited : (310)

References (40)
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    • G. H. Gilmer, T. Diaz de la Rubia, D. M. Stock and M. Jaraiz, Nucl. Instrum. Methods Phys. Res. B 102, 247 (1995).
    • (1995) , vol.102 , pp. 247
    • Gilmer, G.1    Diaz, T.2    Stock, D.3    Jaraiz, M.4
  • 19
    • 0001037859 scopus 로고    scopus 로고
    • L. Colombo, Annu. Rev. Comput. Phys. 4, 147 (1996).
    • (1996) , vol.4 , pp. 147
    • Colombo, L.1
  • 38
    • 0003767280 scopus 로고    scopus 로고
    • E. Sirtl, in Semiconductor Silicon, edited by H. R. Huff and E. Sirtl (Electrochemical Society, Pennington, NJ, 1977), p. 4.
    • Semiconductor Silicon , pp. 4
    • Sirtl, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.