Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 4, 2011, Pages

  Fukasawa, Masanaga ^a   Nakakubo, Yoshinori ^b   Matsuda, Asahiko ^b   Takao, Yoshinori ^b   Eriguchi, Koji ^b   Ono, Kouichi ^b   Minami, Masaki ^c   Uesawa, Fumikatsu ^c   Tatsumi, Tetsuya ^c  

^a SONY CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c Semiconductor Business Group   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK OXIDES; CAPACITANCE-VOLTAGE CHARACTERISTICS; DAMAGE STRUCTURE; DAMAGED LAYERS; DEVICE PERFORMANCE; ELECTRICAL CHARACTERIZATION; ELECTRICAL PERFORMANCE; HIGH RESOLUTION; IN-LINE MONITORING; ION ENERGIES; ION SPECIES; MASS PRODUCTION; OPTICAL MODELS; PLASMA DAMAGE; PLASMA EXPOSURE; POSITIVE CHARGES; PRECISE MONITORING; SI SUBSTRATES; SILICON SUBSTRATES; SURFACE OXIDATIONS;

HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS; OXIDATION; POLYPEPTIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

PLASMAS;

EID: 79960551857     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3596606     Document Type: Article

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