New evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 563-566

  Egashira, Kyoko ^a   Eriguchi, Koji ^a   Hashimoto, Shin ^a  

^a Matushita Electronics Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); PLASMA APPLICATIONS; RADIATION DAMAGE; SEMICONDUCTOR METAL BOUNDARIES;

PLASMA PROCESSING; VOLTAGE SHIFT CONSTANT CURRENT INJECTION (VSCCI);

SILICON WAFERS;

EID: 0032277568     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)