Influence of near-surface defects in Si induced by reactive ion etching on the electrical properties of the Pt/n-Si interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6682-6686

  Koyama, Masato ^a,b   Cheong, Chon Wa ^a   Yokoyama, Koji ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Current transport in metal semiconductor interface; Donor like defects; Process induced damage; Reactive ion etching; Schottky barrier height; Temperature dependence of I V characteristics

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FERMI LEVEL; INTERFACES (MATERIALS); PLATINUM; REACTIVE ION ETCHING; SILICON WAFERS; THERMAL EFFECTS;

THERMIONIC EMISSIONS;

SCHOTTKY BARRIER DIODES;

EID: 0031277387     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6682     Document Type: Article

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