Optical and electrical characterization of hydrogen-plasma-damaged silicon surface structures and its impact on in-line monitoring

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 2, 2010, Pages

  Nakakubo, Yoshinori ^a   Matsuda, Asahiko ^a   Fukasawa, Masanaga ^b   Takao, Yoshinori ^a   Tatsumi, Tetsuya ^b   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL ANALYSIS; ENERGY BANDGAPS; ETCH RATES; EXTINCTION COEFFICIENTS; H2 PLASMA; IN-LINE MONITORING; INTERFACE LAYER; LAYER THICKNESS; LAYER-BY-LAYERS; LOWER ENERGIES; OPTICAL AND ELECTRICAL CHARACTERIZATION; OPTICAL MODELS; PHOTOGENERATED CARRIERS; PHOTON ENERGY; PLASMA DAMAGE; PLASMA EXPOSURE; PLASMA PROCESS; RESIDUAL DAMAGE; SI SUBSTRATES; SI SURFACES; TRAP SITES; TWO LAYERS;

DAMAGE DETECTION; MONITORING; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; VOLTAGE MEASUREMENT;

PLASMAS;

EID: 77958100579     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.08JD02     Document Type: Article

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