Photoreflectance characterization of the plasma-induced damage in Si substrate

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2336-2341

  Wada, Hideo ^a   Agata, Masashi ^a   Eriguchi, Koji ^b   Fujimoto, Akira ^c   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002949082     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1286924     Document Type: Article

References (25)

1. X. C. Mu, S. J. Fonash, A. Rohatgi, and J. Rieger, Appl. Phys. Lett. 48, 1147 (1986).
2. O. O. Awadelkarim, P. I. Mikulan, K. A. Reinhardt, and Y. D. chan, J. Appl. Phys. 76, 2270 (1994).
3. T. Yamaguchi, T. Sasaki, and H. Nikoh, in Proceedings of the 1996 International Symposium on Plasma Process-Induced Damage, California, p. 198.
4. N. Yabumoto, M. Oshiba, O. Michikami, and S. Yshii, Jpn. J. Appl. Phys. 20, 893 (1981).
5. G. S. Oehrlein, A. A. Bright, and S. W. Robey, J. Vac. Sci. Technol. A 6, 1989 (1988).
6. A. Murata, M. Nakamura, A. Asai, and I. Taniguchi, IEICE Trans. Electron. E75-C, 990 (1992).
7. K. Jezierski, J. Misiewicz, P. Markiewicz, M. Panek, B. Sciana, M. Tlaczala, and R. Korbutowicz, Phys. Status Solidi A 147, 467 (1995).
8. S. Shinha, B. M. Arora, and S. Subramanian, J. Appl. Phys. 79, 427 (1996).
9. T. Imai, A. Fujimoto, M. Okuyama, and Y. Hamakawa, Jpn. J. Appl. Phys., Part 1 35, 1073 (1996).
10. M. Morifuji, P. Yongwattanasoontorn, K. Taniguchi, C. Hamaguchi, and Y. Ozawa, Jpn. J. Appl. Phys., Part 1 32, 2735 (1993).
11. F. H. Pollak and H. Shen, J. Electron. Mater. 19, 399 (1990).
12. M. Murtagh, P. V. Kelly, P. A. F. Herbert, M. O'Connor, G. Duffy, and G. M. Crean, Appl. Surf. Sci. 63, 158 (1993).
13. W. M. Shen, M. C. A. Fantini, F. H. Pollak, and M. Tomkiewicz, J. Appl. Phys. 66, 1765 (1989).
14. K. Eriguchi, T. Imai, A. Asai, and M. Okuyama, in Proceedings of the 1997 International Symposium on Plasma Process-Induced Damage, California, p. 215.
15. A. Giordana, R. Glosser, J. G. Perllegrino, S. Qadri, M. E. Twigg, E. D. Richmond, K. Joyner, and G. Pollack, Mater. Res. Soc. Symp. Proc. 188, 349 (1990).
16. D. E. Aspnes, Surf. Sci. 37, 418 (1973).
17. S. Adachi, Phys. Rev. B 35, 3224 (1989).
18. A. Daunois and D. E. Aspnes, Phys. Rev. B 18, 1824 (1978).
19. O. J. Glembocki and B. V. Shanabrook, Superlattices Microstruct. 5, 603 (1989).
20. P. M. Raccah, J. W. Garland, Z. Zhang, U. Lee, D. Z. Xue, L. L. Abels, S. Ugur, and W. Wilinsky, Phys. Rev. Lett. 53, 1958 (1984).
21. W. M. Shen, M. C. A. Fantini, F. H. Pollak, and M. Tomkiewicz, J. Appl. Phys. 66, 1759 (1989).
22. P. Yongwattanasoontorn, H. Kubo, M. Morifuji, K. Taniguchi, and C. Hamaguchi, Extended Abstracts of 1991 International Conference on Solid State Device and Materials, p. 35.
23. F. H. Pollak and G. W. Rubloff, Phys. Rev. Lett. 29, 789 (1972).
24. H. Wada, K. Eriguchi, A. Fujimoto, T. Kanashima, and M. Okuyama, in Proceedings of the 1998 International Symposium on Plasma Process-Induced Damage, Hawaii, p. 152.
25. H. Wada, K. Eriguchi, A. Fujimoto, T. Kanashima, and M. Okuyama, Technical Report of IEICE, SDM97-169 (in Japanese).