Soft error susceptibilities of 22 nm tri-gate devices

IEEE Transactions on Nuclear Science

Volumn 59, Issue 6, 2012, Pages 2666-2673

  Seifert, Norbert ^a   Gill, Balkaran ^a   Jahinuzzaman, Shah ^a   Basile, Joseph ^a   Ambrose, Vinod ^a   Shi, Quan ^a   Allmon, Randy ^a   Bramnik, Arkady ^b  

^a INTEL CORPORATION   (United States)

^b INTEL CORPORATION   (Israel)

Author keywords

FinFET; radiation; single event effect (SEE); soft error; soft error rate (SER); Tri Gate

Indexed keywords

FINFET; SINGLE EVENT EFFECTS; SOFT ERROR; SOFT ERROR RATE; TRIGATE;

ELECTRICAL ENGINEERING; HEAT RADIATION; NUCLEAR ENERGY;

LOGIC DEVICES;

EID: 84871392447     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2218128     Document Type: Article

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