Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 3, 2011, Pages

  Eriguchi, Koji ^a   Nakakubo, Yoshinori ^a   Matsuda, Asahiko ^a   Kamei, Masayuki ^a   Takao, Yoshinori ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT SITES; DEVICE PARAMETERS; DEVICE SPECIFICATION; DRAIN SATURATION CURRENT; HIGH ENERGY; ION ENERGIES; ION FLUXES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFET PERFORMANCE; MOSFETS; N-CHANNEL; OFF-STATE LEAKAGE; OPTIMIZATION METHODOLOGY; OPTIMIZATION PROBLEMS; PHYSICAL DAMAGES; PLASMA PARAMETER; PLASMA PROCESS; PLASMA-INDUCED DAMAGE; RECESS DEPTH; TRADE-OFF RELATIONSHIP; WET-ETCH;

DAMS; DEFECT DENSITY; DEFECTS; DIELECTRIC DEVICES; DRAIN CURRENT; HIGH ENERGY PHYSICS; ION BOMBARDMENT; IONS; MOSFET DEVICES; OPTIMIZATION; PLASMA DEVICES; PLASMAS; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS;

SEMICONDUCTING SILICON;

EID: 80051975557     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.08KD04     Document Type: Conference Paper

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