Comprehensive modeling of threshold voltage variability induced by plasma damage in advanced metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Eriguchi, Koji ^a   Nakakubo, Yoshinori ^a   Matsuda, Asahiko ^a   Kamei, Masayuki ^a   Takao, Yoshinori ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA RATIOS; CHARGING DAMAGE; CLASSICAL MOLECULAR DYNAMICS; COMPREHENSIVE MODELING; CONDUCTION CURRENT; CONSTANT-CURRENT STRESS; CURRENT SOURCES; DAMAGE MECHANISM; DEVICE SIMULATIONS; DEVICE SURFACES; GATE LENGTH; HIGH-ENERGY IONS; INDUCTIVELY COUPLED PLASMA REACTOR; LINEAR DEPENDENCE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; PHYSICAL DAMAGES; PLASMA CONDITIONS; PLASMA DAMAGE; PLASMA PARAMETER; PLASMA PROCESSING; POTENTIAL DROP; POWER-LAW DEPENDENCES; PRACTICAL MEASURES; RECESS DEPTH; SI WAFER; SOURCE/DRAIN EXTENSION REGIONS; SURFACE DAMAGES; TECHNOLOGY COMPUTER AIDED DESIGN; THRESHOLD VOLTAGE SHIFTS; THRESHOLD VOLTAGE VARIABILITY;

ANTENNAS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DIELECTRIC DEVICES; ELECTROMAGNETIC INDUCTION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); INDUCTIVELY COUPLED PLASMA; ION BEAMS; MOLECULAR DYNAMICS; MOSFET DEVICES; PLASMA APPLICATIONS; PLASMA DEVICES; SILICON WAFERS; SURFACE CHEMISTRY; THRESHOLD VOLTAGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952705223     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DA18     Document Type: Article

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