Epitaxial c -axis oriented BaTiO3 thin films on SrTiO 3-buffered Si(001) by atomic layer deposition

Applied Physics Letters

Volumn 104, Issue 8, 2014, Pages

  Ngo, Thong Q ^a   Posadas, Agham B ^b   McDaniel, Martin D ^a   Hu, Chengqing ^a   Bruley, John ^c   Yu, Edward T ^a   Demkov, Alexander A ^b   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; BUFFER LAYERS; CAPACITANCE; CRYSTALLINITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON COMPOUNDS; STRONTIUM TITANATES; THICK FILMS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

C-AXIS ORIENTATIONS; CAPACITANCE VOLTAGE CHARACTERISTIC; CROSS-SECTIONAL SCANNING; DEGREE OF CRYSTALLINITY; EFFECTIVE DIELECTRIC CONSTANTS; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; TETRAGONAL STRUCTURE; TITANIUM TETRAISOPROPOXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84896777329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4867469     Document Type: Article

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