Strain relaxation in single crystal SrTiO 3 grown on Si (001) by molecular beam epitaxy

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

  Choi, Miri ^a   Posadas, Agham ^a   Dargis, Rytis ^a   Shih, Chih Kang ^a   Demkov, Alexander A ^a   Triyoso, Dina H ^b   David Theodore, N ^c   Dubourdieu, Catherine ^d   Bruley, John ^d   Jordan Sweet, Jean ^d  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b GLOBALFOUNDRIES   (Germany)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; ELEVATED TEMPERATURE; FUNCTIONAL OXIDES; LATTICE MATCHING; OVERLAYERS; OXYGEN PARTIAL PRESSURE; PEROVSKITE OXIDES; SI(0 0 1); SRTIO; STRAIN STATE;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PEROVSKITE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SINGLE CRYSTALS; STRAIN RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

STRONTIUM TITANATES;

EID: 84859544346     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3695998     Document Type: Article

References (36)

1. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998). 10.1103/PhysRevLett.81.3014
2. J. Ramdani, R. Droopad, Z. Yu, J. A. Curless, C. D. Overgaard, J. Finder, K. Eisenbeiser, J. A. Hallmark, W. J. Ooms, V. Kaushik, P. Alluri, and S. Pietambaram, Appl. Surf. Sci. 159, 127 (2000). 10.1016/S0169-4332(00)00050-7
3. R. A. McKee, F. J. Walker, and M. F. Chisholm, Science 293, 468 (2001). 10.1126/science.293.5529.468
4. X. Hu H. Li, Y. Liang, Y. Wei, Z. Yu, D. Marshall, J. Edwards, R. Droopad, X. Zhang, A. A. Demkov, K. Moore, and J. Kulik, Appl. Phys. Lett. 82, 203 (2003). 10.1063/1.1536247
5. X. Zhang, A. A. Demkov, H. Li, X. Hu, Y. Wei, and J. Kulik, Phys. Rev. B 68, 125323 (2003). 10.1103/PhysRevB.68.125323
6. C. J. Först, C. R. Ashman, K. Schwarz, and P. E. Blöchl, Nature 427, 53 (2004). 10.1038/nature02204
7. X. F. Wang, Juan Wang, Quan Li, M. S. Moreno, X. Y. Zhou, J. Y. Dai, Y. Wang, and D. Tang, J. Phys. D: Appl. Phys. 42, 085409 (2009). 10.1088/0022-3727/42/8/085409
8. A. M. Kolpak, F. J. Walker, J. W. Reiner, Y. Segal, D. Su, M. S. Sawicki, C. C. Broadbridge, Z. Zhang, Y. Zhu, C. H. Ahn, and S. Ismail-Beigi, Phys. Rev. Lett. 105, 217601 (2010). 10.1103/PhysRevLett.105.217601
9. C. Dubourdieu, I. Gélard, O. Salicio, G. Saint-Girons, B. Vilquin, and G. Hollinger, Int. J. Nanotechnol. 7, 320 (2010). 10.1504/IJNT.2010.031723
10. F. Amy, A. S. Wan, A. Kahn, F. J. Walker, and R. A. McKee, J. Appl. Phys. 96, 1635 (2004). 10.1063/1.1766417
11. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 77, 1662 (2000). 10.1063/1.1310209
12. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, and J. Ramdani, J. Vac. Sci Technol. A 19, 934 (2001). 10.1116/1.1365132
13. C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.-P. Locquet, J. Fompeyrine, D. J. Webb, Ch. Dieker, and Jin Won Seo, Appl. Phys. Lett. 89, 053506 (2006). 10.1063/1.2236464
14. J. W. Reiner, A. Posadas, M. Wang, M. Sidorov, Z. Krivokapic, F. J. Walker, T. P. Ma, and C. H. Ahn, J. Appl. Phys. 105, 124501 (2009). 10.1063/1.3148243
15. V. Vaithnayathan, J. Appl. Phys. 100, 024108 (2006). 10.1063/1.2203208
16. G. Niu, S. Yin, G. Saint-Girons, B. Gautier, P. Lecoeur, V. Pillard, G. Hollinger, and B. Vilquin, Microelectron. Eng. 88, 1232 (2011). 10.1016/j.mee.2011.03.028
17. A. K. Pradhan, J. B. Dadson, D. Hunter, K. Zhang, S. Mohanty, E. M. Jackson, B. Lasley-Hunter, K. Lord, T. M. Williams, R. R. Rakhimov, J. Zhang, D. J. Sellmyer, K. Inaba and T. Hasegawa, S. Mathews, B. Joseph, B. R. Sekhar, U. N. Roy, Y. Cui, and A. Burger, J. Appl. Phys. 100, 033903 (2006). 10.1063/1.2222402
18. J. Wang, Appl. Phys. Lett. 85, 2574 (2004). 10.1063/1.1799234
19. A. Posadas, M. Berg, H. Seo, A. de Lozanne, A. A. Demkov, D. J. Smith, A. P. Kirk, D. Zhernokletov, and R. M. Wallace, Appl. Phys. Lett. 98, 053104 (2011). 10.1063/1.3549301
20. J. H. Lee, Nature 466, 954 (2010). 10.1038/nature09331
21. H. Li, X. Hu, Y. Wei, Z. Yu, X. Zhang, R. Droopad, A. A. Demkov, J. Edwards, K. Moore, W. Ooms, J. Kulik, and P. Fejes, J. Appl. Phys. 93, 4521 (2003). 10.1063/1.1562001
22. J. C. Woicik, H. Li, P. Zschack, E. Karapetrova, P. Ryan, C. R. Ashman, and C. S. Hellberg, Phys. Rev. B 73, 024112 (2006). 10.1103/PhysRevB.73.024112
23. M. P. Warusawithana, C. Cen, C. R. Sleasman, J. C. Woicik, Y. Li, L. Fitting Kourkoutis, J. A. Klug, H. Li, P. Ryan, L.-P. Wang, M. Bedzyk, D. A. Muller, L.-Q. Chen, J. Levy, and D. G. Schlom, Science 324, 367 (2009). 10.1126/science.1169678
24. D. P. Kumah, Appl. Phys. Lett. 97, 251902 (2010). 10.1063/1.3529460
25. F. S. Aguirre-Tostado, Phys. Rev. B 70, 201403R (2004). 10.1103/PhysRevB.70.201403
26. F. Niu and B. W. Wessels, J. Cryst. Growth 300, 509 (2007). 10.1016/j.jcrysgro.2006.12.024
27. G. Delhaye, C. Merckling, M. El-Kazzi, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger, L. Largeau, and G. Patriarche, J. Appl. Phys. 100, 124109 (2006). 10.1063/1.2407273
28. J. H. Haeni, C. D. Theis, and D. G. Schlom, J. Electroceram. 4, 385 (2000). 10.1023/A:1009947517710
29. C. M. Brooks, L. F. Kourkoutis, T. Heeg, J. Schubert, D. A. Muller, and D. G. Schlom, Appl. Phys. Lett. 94, 162905 (2009). 10.1063/1.3117365
30. Yi Wei, X. Hu, Y. Liang, D. Jordan, B. Craigo, R. Droopad, Z. Yu, A. A. Demkov, J. Edwards, Jr., and W. Ooms, J. Vac. Sci. Technol. B 20, 1402 (2002). 10.1116/1.1491547
31. A. A. Demkov and X. Zhang, J. Appl. Phys. 103, 103710 (2008). 10.1063/1.2924433
32. H. Ledbetter, M. Lei, and S. Kim, Phase Trans. 23, 61 (1990). 10.1080/01411599008241819
33. See http://www-llb.cea.fr/prism/programs/simulreflec/simulreflec.html for a description of the SimulReflec reflectivity fitting program used to determine layer thicknesses and to download the program.
34. G. J. Yong, Rajeswari M. Kolagani, S. Adhikari, W. Vanderlinde, Y. Liang, K. Muramatsu, and S. Friedrich, J. Appl. Phys. 108, 033502 (2010). 10.1063/1.3460098
35. A. Posadas, R. Dargis, M. R. Choi, A. Slepko, A. A. Demkov, J. J. Kim, and D. J. Smith, J. Vac. Sci. Technol. B 29, 03C131 (2011). 10.1116/1.3579598
36. V. Shutthananda, S. Thevuthasan, Y. Liang, E. M. Adams, Z. Yu, and R. Droopad, Appl. Phys. Lett. 80, 1803 (2002). 10.1063/1.1456261