C-axis oriented epitaxial BaTiO 3 films on (001) Si

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Vaithyanathan, V ^a,b,e   Lettieri, J ^a,f   Tian, W ^a,b   Sharan, A ^a   Vasudevarao, A ^a   Li, Y L ^a,f   Kochhar, A ^b   Ma, H ^b   Levy, J ^b   Zschack, P ^c   Woicik, J C ^d   Chen, L Q ^a   Gopalan, V ^a   Schlom, D G ^a,b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e SEAGATE TECHNOLOGY   (United States)

^f LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; EPITAXIAL FILMS; SILICON SUBSTRATES; SPATIAL RESOLUTION;

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; SECOND HARMONIC GENERATION; THERMAL EXPANSION; X RAY DIFFRACTION;

FERROELECTRIC THIN FILMS;

EID: 33746842197     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2203208     Document Type: Article

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