Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4801-4803

  Liu, B T ^a   Maki, K ^a   So, Y ^a   Nagarajan, V ^a   Ramesh, R ^a   Lettieri, J ^b   Haeni, J H ^b   Schlom, D G ^b   Tian, W ^c   Pan, X Q ^c   Walker, F J ^d   McKee, R A ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE COUPLINGS; ELECTRICAL RESPONSE; EPITAXIAL FERROELECTRIC; FERROELECTRIC CAPACITORS; FERROELECTRIC LAYERS; LOW TEMPERATURES; PEROVSKITE LAYERS; PULSE WIDTH; PZT; SILICON SUBSTRATES; SRTIO; TEMPLATE LAYERS; TIO;

COBALT COMPOUNDS; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; PEROVSKITE; SILICON WAFERS; SOL-GEL PROCESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956011748     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484552     Document Type: Article

References (22)

1. O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today 51, 22 (1998). pto PHTOAD 0031-9228
2. See for example, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, edited by S. P. Murarka, M. Eizenberg, D. B. Fraser, R. Madar, and R. T. Tung (Materials Research Society, Warrendale, PA, 1998), Vol. 514.
3. B. Yang, S. Aggarwal, A. M. Dhote, T. K. Song, R. Ramesh, and J. S. Lee, Appl. Phys. Lett. 71, 356 (1997). apl APPLAB 0003-6951
4. S. Aggarwal, B. Nagaraj, I. G. Jenkins, H. Li, R. P. Sharma, L. Salamanca-Riba, R. Ramesh, A. M. Dhote, A. R. Krauss, and O. Auciello, Acta Mater. 48, 3387 (2000). acz ACMAFD 1359-6454
5. S. R. Summerfelt, T. S. Moise, G. Xing, L. Colombo, T. Sakoda, S. R. Gilbert, A. L. S. Loke, S. Ma, L. A. Wills, R. Kavari, T. Hsu, J. Amano, S. T. Johnson, D. J. Vestcyk, M. W. Russell, S. M. Bilodeau, and P. van Buskirk, Appl. Phys. Lett. 79, 4004 (2001). apl APPLAB 0003-6951
6. A. Gruverman, Appl. Phys. Lett. 75, 1452 (1999). apl APPLAB 0003-6951
7. T. Yamaguti, Proc. Phys. Math. Soc. Jpn. 17, 443 (1935). ppm PPMJAJ 0370-1239
8. R. Sato, J. Phys. Soc. Jpn. 6, 527 (1951). jup JUPSAU 0031-9015
9. M. Ihara, Y. Arimoto, M. Jifuku, T. Kimura, S. Kodama, H. Yamawaki, and T. Yamaoka, J. Electrochem. Soc. 129, 2569 (1982). jes JESOAN 0013-4651
10. S. Matsubara, N. Shohata, and M. Mikami, Jpn. J. Appl. Phys., Suppl. 24, 10 (1985). jjs JJPYA5 0021-4922
11. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998). prl PRLTAO 0031-9007
12. A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. Mckee, F. J. Walker, and E. D. Specht, Appl. Phys. Lett. 78, 2034 (2001). apl APPLAB 0003-6951
13. K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard, Appl. Phys. Lett. 76, 1324 (2000). apl APPLAB 0003-6951
14. Y. Wang, C. Ganpule, B. T. Liu, H. Li, K. Mori, B. Hill, M. Wuttig, R. Ramesh, J. Finder, Z. Yu, R. Droopad, and K. Eisenbeiser, Appl. Phys. Lett. 80, 97 (2002). apl APPLAB 0003-6951
15. O. N. Tufte and P. W. Chapman, Phys. Rev. 155, 796 (1967); phr PHRVAO 0031-899X
16. H. P. R. Frederikse, W. R. Thurber, and W. R. Hosler, Phys. Rev. 134, A442 (1964); pva PRVAAH 0096-8250
17. H. Yamada and G. R. Miller, J. Solid State Chem. 6, 169 (1973). jss JSSCBI 0022-4596
18. K. Maki, N. Soyama, K. Nagamine, S. Mori, and K. Ogi, Jpn. J. Appl. Phys., Part 1 40, 5533 (2001). jjb JAPNDE 0021-4922
19. 3 are used (a=3.83Å).
20. W. Tian, X. Q. Pan, B. T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J. H. Haeni, and D. G. Schlom (unpublished).
21. E. Fatuzzo and W. J. Merz, Ferroelectricity (Wiley, New York, 1967).
22. R. Ramesh, W. K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J. M. Tarascon, D. K. Fork, J. Lee, and A. Safari, Appl. Phys. Lett. 61, 1537 (1992). apl APPLAB 0003-6951