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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1195-1199

Commercial molecular beam epitaxy production of high quality SrTi O 3 on large diameter Si substrates

(11) Gu, X a Lubyshev, D a Batzel, J a Fastenau, J M a Liu, W K a Pelzel, R a Magana, J F b Ma, Q b Wang, L P b Zhang, P b Rao, V R b

a IQE INC (United States)

b INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFRACTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ATOMIC FORCE; CRYSTALLINE QUALITY; DEFECT-FREE; HIGH QUALITY; INTERFACIAL LAYER; LARGE DIAMETER; PRODUCTION PROCESS; ROCKING CURVES; ROOT MEAN SQUARE ROUGHNESS; RUTHERFORD BACK-SCATTERING; SI SUBSTRATES; SINGLE PHASE; SRTIO; TRANSMISSION ELECTRON MICROSCOPE;

MOLECULAR BEAMS;

EID: 77955344369 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3130165 Document Type: Conference Paper

Times cited : (33)

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