Epitaxy of BaTiO3 thin film on Si(0 0 1) using a SrTiO 3 buffer layer for non-volatile memory application

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1232-1235

  Niu, G ^a   Yin, S ^a   Saint Girons, G ^a   Gautier, B ^a   Lecoeur, P ^b   Pillard, V ^b   Hollinger, G ^a   Vilquin, B ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Ferroelectric; Molecular beam epitaxy; Non volatile memory; Pulsed laser deposition; Thin film

Indexed keywords

BARIUM TITANATE; FERROELECTRIC MATERIALS; FERROELECTRICITY; MOLECULAR BEAM EPITAXY; NONVOLATILE STORAGE; OXYGEN; PULSED LASER DEPOSITION; STRONTIUM TITANATES; THIN FILMS;

ATOMICALLY FLAT SURFACE; BATIO3 THIN FILMS; DIELECTRIC BEHAVIOR; ELECTRICAL CHARACTERIZATION; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION; POST DEPOSITION ANNEALING; SINGLE-CRYSTALLINE;

SILICON COMPOUNDS;

EID: 79958058743     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.028     Document Type: Conference Paper

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