The quantum metal ferroelectric field-effect transistor

IEEE Transactions on Electron Devices

Volumn 61, Issue 6, 2014, Pages 2145-2153

  Frank, David J ^a   Solomon, Paul M ^a   Dubourdieu, Catherine ^a,b   Frank, Martin M ^a   Narayanan, Vijay ^a   Theis, Thomas N ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

Ferroelectrics (FEs); field effect transistor (FET); low power devices; negative capacitance; steep slope.

Indexed keywords

CAPACITANCE; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; POLARIZATION;

FERROELECTRIC FIELD EFFECT TRANSISTORS; LOW-POWER DEVICES; NEGATIVE CAPACITANCE; NEGATIVE CAPACITANCE EFFECT; REDUCING ENERGY CONSUMPTION; SEMICONDUCTOR CHANNELS; STEEP SLOPE; SUBTHRESHOLD CHARACTERISTICS;

METALS;

EID: 84901451918     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2314652     Document Type: Article

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