메뉴 건너뛰기




Volumn 98, Issue 13, 2011, Pages

Enhancing the electron mobility of SrTiO3 with strain

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX OXIDES; HETEROSTRUCTURES; HIGH MOBILITY; SRTIO;

EID: 79953740890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3571447     Document Type: Article
Times cited : (86)

References (17)
  • 2
    • 19944433396 scopus 로고    scopus 로고
    • Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors
    • DOI 10.1063/1.1819976, 011101
    • M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, J. Appl. Phys. 0021-8979 97, 011101 (2005). 10.1063/1.1819976 (Pubitemid 40183093)
    • (2005) Journal of Applied Physics , vol.97 , Issue.1 , pp. 01110101-01110127
    • Lee, M.L.1    Fitzgerald, E.A.2    Bulsara, M.T.3    Currie, M.T.4    Lochtefeld, A.5
  • 5
    • 4243381737 scopus 로고
    • 0031-9007, 10.1103/PhysRevLett.5.307
    • J. C. Hensel and G. Feher, Phys. Rev. Lett. 0031-9007 5, 307 (1960). 10.1103/PhysRevLett.5.307
    • (1960) Phys. Rev. Lett. , vol.5 , pp. 307
    • Hensel, J.C.1    Feher, G.2
  • 6
    • 36149015916 scopus 로고
    • 0031-899X, 10.1103/PhysRev.129.1041
    • J. C. Hensel and G. Feher, Phys. Rev. 0031-899X 129, 1041 (1963). 10.1103/PhysRev.129.1041
    • (1963) Phys. Rev. , vol.129 , pp. 1041
    • Hensel, J.C.1    Feher, G.2
  • 7
    • 4243776394 scopus 로고
    • 0556-2805, 10.1103/PhysRevB.6.4740
    • L. F. Mattheiss, Phys. Rev. B 0556-2805 6, 4740 (1972). 10.1103/PhysRevB.6.4740
    • (1972) Phys. Rev. B , vol.6 , pp. 4740
    • Mattheiss, L.F.1
  • 14
    • 79953762671 scopus 로고    scopus 로고
    • See supplementary material at E-APPLAB-98-056113 for an estimate of the maximum strain in the experiment.
    • See supplementary material at http://dx.doi.org/10.1063/1.3571447 E-APPLAB-98-056113 for an estimate of the maximum strain in the experiment.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.