Advances in heteroepitaxy of oxides on silicon

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 51-56

  Yu, Z ^a   Liang, Y ^a   Overgaard, C ^a   Hu, X ^a   Curless, J ^a   Li, H ^a   Wei, Y ^a   Craigo, B ^a   Jordan, D ^a   Droopad, R ^a   Finder, J ^a   Eisenbeiser, K ^a   Marshall, D ^a   Moore, K ^a   Kulik, J ^a   Fejes, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

Interface; Molecular beam epitaxy (MBE); Perovskite oxide; Silicon

Indexed keywords

GROWTH PROCESSES; HETEROEPITAXY; INTERFACIAL LAYERS; PEROVSKITE OXIDES;

CRYSTALLINE MATERIALS; CURRENT DENSITY; DESORPTION; GROWTH KINETICS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PEROVSKITE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICA; SILICON ON INSULATOR TECHNOLOGY; STOICHIOMETRY;

EPITAXIAL GROWTH;

EID: 4344630862     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.088     Document Type: Article

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