Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode

Nature Nanotechnology

Volumn 8, Issue 10, 2013, Pages 748-754

  Dubourdieu, Catherine ^a,d   Bruley, John ^a   Arruda, Thomas M ^b   Posadas, Agham ^c   Jordan Sweet, Jean ^a   Frank, Martin M ^a   Cartier, Eduard ^a   Frank, David J ^a   Kalinin, Sergei V ^b   Demkov, Alexander A ^c   Narayanan, Vijay ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILMS; ELECTRODES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT SEMICONDUCTOR DEVICES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; OXIDE FILMS; PEROVSKITE; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SILICON; STRONTIUM TITANATES; SUBSTRATES;

FERROELECTRIC POLARIZATION; FERROELECTRIC SWITCHING; HIGH RESOLUTION SCANNING TRANSMISSION ELECTRON MICROSCOPIES; METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE; PIEZOFORCE MICROSCOPY; SATURATED HYSTERESIS LOOPS; SYNCHROTRON X RAY DIFFRACTION; TETRAGONAL STRUCTURE;

BARIUM COMPOUNDS;

BARIUM DERIVATIVE; METAL; SILICON; TITANIUM DERIVATIVE;

ARTICLE; ELECTRICITY; ELECTRODE; FERROELECTRIC POLARIZATION; FERROELECTRICITY; FILM; MICROSCOPY; PIEZOFORCE MICROSCOPY; POLARIZATION; PRIORITY JOURNAL; SEMICONDUCTOR; SYNCHROTRON X RAY DIFFRACTION; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 84885474361     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2013.192     Document Type: Article

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