Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics

Nanotechnology

Volumn 25, Issue 26, 2014, Pages

  Zhou, Shuang ^a   Su, Yaorong ^a   Xiao, Yubin ^a   Zhao, Ni ^a   Xu, Jianbin ^a   Wong, Chingping ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

GFETs; high k; low voltage mobility; ODPA ATO

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; GFETS; GRAPHENE FIELD-EFFECT TRANSISTORS; HIGH-K; LOW VOLTAGE OPERATION; LOW-VOLTAGE; OCTADECYLPHOSPHONIC ACIDS; ODPA/ATO;

GRAPHENE;

EID: 84902449235     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/26/265201     Document Type: Article

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