SCOPUS 정보 검색 플랫폼

Organic Electronics

Volumn 14, Issue 3, 2013, Pages 775-781

In situ modification of low-cost Cu electrodes for high-performance low-voltage pentacene thin film transistors (TFTs)

(7) Su, Yaorong a Wang, Mingdong a Xie, Fangyan b Chen, Jian b Xie, Weiguang c Zhao, Ni a Xu, Jianbin a

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b SUN YAT SEN UNIVERSITY (China)

c JINAN UNIVERSITY (China)

Author keywords

Contact resistance; Hole injection; In situ; Low voltage; Solution processed

Indexed keywords

CAPACITANCE; CHARGE INJECTION; CONTACT RESISTANCE; COSTS; ELECTRODES; GATE DIELECTRICS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DEVICE PERFORMANCE; ELECTRONIC CHARACTERISTICS; HOLE INJECTION; IN-SITU MODIFICATIONS; LOW VOLTAGES; OPTIMIZED INTERFACE PROPERTIES; PENTACENE THIN FILM TRANSISTORS; SOLUTION-PROCESSED;

THIN FILM CIRCUITS;

EID: 84873042790 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2012.12.025 Document Type: Article

Times cited : (17)

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