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Volumn 98, Issue 20, 2011, Pages

Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure

(7) Lee, Tae Young a,b Chang, Joonyeon a,c Hickey, Mark C c Koo, Hyun Cheol a Kim, Hyung Jun a Han, Suk Hee a Moodera, Jagadeesh S c

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ENERGY; BANDBENDING; BARRIER ASYMMETRY; ELECTRONIC CHARGE DISTRIBUTION; HETEROSTRUCTURES; INAS QUANTUM WELL; INAS/INGAAS; INAS/INGAAS HETEROSTRUCTURES; OSCILLATORY MAGNETORESISTANCE; QUANTUM WELL; RASHBA SPIN-ORBIT COUPLING; SELF-CONSISTENT FIELD METHOD; SPIN ORBIT INTERACTIONS; SPIN-ORBIT COUPLINGS;

ELECTRIC RESISTANCE; HETEROJUNCTIONS; INDIUM ARSENIDE; MAGNETORESISTANCE; ORBITS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79957571322 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3589812 Document Type: Article

Times cited : (17)

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