Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates

Journal of Physics Condensed Matter

Volumn 22, Issue 33, 2010, Pages

  Joshi, P ^a   Romero, H E ^b   Neal, A T ^a,c   Toutam, V K ^a   Tadigadapa, S A ^a,b  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY; FIELD-EFFECT DEVICES; GATE VOLTAGES; INTRINSIC DOPING; NEAR-SURFACE; P-DOPING; ROOM TEMPERATURE; SILANOL GROUPS; SURFACE-BOUND WATER; VACUUM DEGASSING; VACUUM-ANNEALING;

DEGASSING; DESORPTION; GRAPHENE; HYDRATION; HYSTERESIS; SILICON COMPOUNDS; SUBSTRATES; SURFACE DEFECTS; TRANSCONDUCTANCE; VACUUM;

FIELD EFFECT TRANSISTORS;

NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON DIOXIDE; TRANSISTORS, ELECTRONIC;

EID: 77956929398     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/33/334214     Document Type: Article

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