Scaling of Al 2O 3 dielectric for graphene field-effect transistors

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Fallahazad, B ^a   Lee, K ^a   Lian, G ^b   Kim, S ^a   Corbet, C M ^a   Ferrer, D A ^a   Colombo, L ^b   Tutuc, E ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; DIELECTRIC STACK; NUCLEATION LAYERS; PARTIALLY CRYSTALLINE; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 84863292577     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3689785     Document Type: Article

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