Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage

ACS Nano

Volumn 5, Issue 6, 2011, Pages 5031-5037

  Xu, Huilong ^a   Zhang, Zhiyong ^a   Xu, Haitao ^a   Wang, Zhenxing ^a   Wang, Sheng ^a   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Dirac point voltage; field effect transistor; graphene; transconductance

Indexed keywords

BACK GATES; DIRAC POINT; DIRAC POINT VOLTAGE; DRAIN VOLTAGE; GATE CONTROL; GATE LENGTH; GATE MATERIALS; GATE METALS; GATE OXIDE; HIGH QUALITY; PEAK TRANSCONDUCTANCE; SERIES RESISTANCES; TOP-GATE;

CARRIER MOBILITY; MESFET DEVICES; MOS DEVICES; PALLADIUM; SILICON COMPOUNDS; TRANSCONDUCTANCE; TRANSISTORS;

GRAPHENE;

EID: 79959806001     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn201115p     Document Type: Article

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