Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors.

Nanotechnology

Volumn 21, Issue 1, 2010, Pages 015705-

  Liao, Lei ^a   Bai, Jingwei ^a   Qu, Yongquan ^a   Huang, Y ^a   Duan, Xiangfeng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE; CARBON; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRIC CAPACITANCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

ALUMINUM OXIDE; CARBON; ELECTRIC CAPACITANCE; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; SILICON; TRANSISTORS, ELECTRONIC;

EID: 76249120156     PISSN: None     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/1/015705     Document Type: Article

References (0)