SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 26, Issue 12, 2014, Pages 1929-1934

3D-transistor array based on horizontally suspended silicon Nano-bridges grown via a bottom-up technique

(5) Oh, Jin Yong a Park, Jong Tae b Jang, Hyun June c Cho, Won Ju c Islam, M Saif a

a Davis (United States)

b SolarLight Ltd (South Korea)

c Kwangwoon University (South Korea)

Author keywords

bottom up; bridge; field effect transistor; memory; nanowire; silicon; surround gate; VLS

Indexed keywords

BRIDGES; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; NANOWIRES; SILICON;

BOTTOM-UP; BOTTOM-UP SYNTHESIS; DEVICE APPLICATION; NANO-BRIDGES; ORIENTED SILICON; SURROUND GATE; TRANSISTOR ARRAYS; VLS;

FIELD EFFECT TRANSISTORS;

EID: 84897108000 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201304245 Document Type: Article

Times cited : (18)

References (50)

1
- 84874611144
- G. Larrieu, X. L. Han, Nanoscale 2013, 5, 2437.
- (2013) Nanoscale , vol.5 , pp. 2437
- Larrieu, G.¹ Han, X.L.²

2
- 84874355840
- J. Wallentin, N. Anttu, D. Asoli, M. Huffman, I. Aberg, M. H. Magnusson, G. Siefer, P. Fuss-Kailuweit, F. Dimroth, B. Witzigmann, H. Q. Xu, L. Samuelson, K. Deppert, M. T. Borgstrom, Science 2013, 339, 1057.
- (2013) Science , vol.339 , pp. 1057
- Wallentin, J.¹ Anttu, N.² Asoli, D.³ Huffman, M.⁴ Aberg, I.⁵ Magnusson, M.H.⁶ Siefer, G.⁷ Fuss-Kailuweit, P.⁸ Dimroth, F.⁹ Witzigmann, B.¹⁰ Xu, H.Q.¹¹ Samuelson, L.¹² Deppert, K.¹³ Borgstrom, M.T.¹⁴

3
- 84873619184
- Q. Yang, Y. Liu, C. F. Pan, J. Chen, X. N. Wen, Z. L. Wang, Nano Lett. 2013, 13, 607.
- (2013) Nano Lett. , vol.13 , pp. 607
- Yang, Q.¹ Liu, Y.² Pan, C.F.³ Chen, J.⁴ Wen, X.N.⁵ Wang, Z.L.⁶

4
- 84877911678
- Y. L. Wu, S. J. Chang, W. Y. Weng, C. H. Liu, T. Y. Tsai, C. L. Hsu, K. C. Chen, IEEE Sens. J. 2013, 13, 2368.
- (2013) IEEE Sens. J. , vol.13 , pp. 2368
- Wu, Y.L.¹ Chang, S.J.² Weng, W.Y.³ Liu, C.H.⁴ Tsai, T.Y.⁵ Hsu, C.L.⁶ Chen, K.C.⁷

5
- 84878879374
- S. Yi, S. Q. Tian, D. W. Zeng, K. Xu, S. P. Zhang, C. S. Xie, Sensor Actuat B-Chem 2013, 185, 345.
- (2013) Sensor Actuat B-Chem , vol.185 , pp. 345
- Yi, S.¹ Tian, S.Q.² Zeng, D.W.³ Xu, K.⁴ Zhang, S.P.⁵ Xie, C.S.⁶

6
- 79951480054
- H. Yan, H. S. Choe, S. W. Nam, Y. J. Hu, S. Das, J. F. Klemic, J. C. Ellenbogen, C. M. Lieber, Nature 2011, 470, 240.
- (2011) Nature , vol.470 , pp. 240
- Yan, H.¹ Choe, H.S.² Nam, S.W.³ Hu, Y.J.⁴ Das, S.⁵ Klemic, J.F.⁶ Ellenbogen, J.C.⁷ Lieber, C.M.⁸

7
- 84855781591
- A. Heinzig, S. Slesazeck, F. Kreupl, T. Mikolajick, W. M. Weber, Nano Lett. 2012, 12, 119.
- (2012) Nano Lett. , vol.12 , pp. 119
- Heinzig, A.¹ Slesazeck, S.² Kreupl, F.³ Mikolajick, T.⁴ Weber, W.M.⁵

8
- 38749136202
- Z. Y. Fan, J. C. Ho, Z. A. Jacobson, R. Yerushalmi, R. L. Alley, H. Razavi, A. Javey, Nano Lett. 2008, 8, 20.
- (2008) Nano Lett. , vol.8 , pp. 20
- Fan, Z.Y.¹ Ho, J.C.² Jacobson, Z.A.³ Yerushalmi, R.⁴ Alley, R.L.⁵ Razavi, H.⁶ Javey, A.⁷

9
- 38949169541
- M. Li, R. B. Bhiladvala, T. J. Morrow, J. A. Sioss, K. K. Lew, J. M. Redwing, C. D. Keating, T. S. Mayer, Nat Nanotechnol 2008, 3, 88.
- (2008) Nat Nanotechnol , vol.3 , pp. 88
- Li, M.¹ Bhiladvala, R.B.² Morrow, T.J.³ Sioss, J.A.⁴ Lew, K.K.⁵ Redwing, J.M.⁶ Keating, C.D.⁷ Mayer, T.S.⁸

10
- 70349706103
- Q. L. Li, X. X. Zhu, Y. Yang, D. E. Ioannou, H. D. Xiong, D. W. Kwon, J. S. Suehle, C. A. Richter, Nanotechnology 2009, 20, 415202.
- (2009) Nanotechnology , vol.20 , pp. 415202
- Li, Q.L.¹ Zhu, X.X.² Yang, Y.³ Ioannou, D.E.⁴ Xiong, H.D.⁵ Kwon, D.W.⁶ Suehle, J.S.⁷ Richter, C.A.⁸

11
- 84895500001
- M. N. Osama, A. A. Dimitri, B. Steven, H. Charles, V. T. Carl, Small 2009, 5, 2440.
- (2009) Small , vol.5 , pp. 2440
- Osama, M.N.¹ Dimitri, A.A.² Steven, B.³ Charles, H.⁴ Carl, V.T.⁵

12
- 34248146950
- A. San Paulo, N. Arellano, J. A. Plaza, R. R. He, C. Carraro, R. Maboudian, R. T. Howe, J. Bokor, P. D. Yang, Nano Lett. 2007, 7, 1100.
- (2007) Nano Lett. , vol.7 , pp. 1100
- San Paulo, A.¹ Arellano, N.² Plaza, J.A.³ He, R.R.⁴ Carraro, C.⁵ Maboudian, R.⁶ Howe, R.T.⁷ Bokor, J.⁸ Yang, P.D.⁹

13
- 34248208452
- R. He, P. Yang, Nat Nanotechnol 2006, 1, 42.
- (2006) Nat Nanotechnol , vol.1 , pp. 42
- He, R.¹ Yang, P.²

14
- 16244408357
- M. S. Islam, S. Sharma, T. I. Kamins, R. S. Williams, Appl. Phys. A 2005, 80, 1133.
- (2005) Appl. Phys. A , vol.80 , pp. 1133
- Islam, M.S.¹ Sharma, S.² Kamins, T.I.³ Williams, R.S.⁴

15
- 34547374344
- A. Chaudhry, V. Ramamurthi, E. Fong, M. S. Islam, Nano letters 2007, 7, 1536.
- (2007) Nano Letters , vol.7 , pp. 1536
- Chaudhry, A.¹ Ramamurthi, V.² Fong, E.³ Islam, M.S.⁴

16
- 0022809054
- S. G. Chamberlain, S. Ramanan, Electron Devices, IEEE Transactions on 1986, 33, 1745.
- (1986) Electron Devices, IEEE Transactions on , vol.33 , pp. 1745
- Chamberlain, S.G.¹ Ramanan, S.²

17
- 84983761444
- C. J. Su, T. I. Tsai, H. C. Lin, T. Y. Huang, T. S. Chao, Nanoscale Res. Lett. 2012, 7, 1.
- (2012) Nanoscale Res. Lett. , vol.7 , pp. 1
- Su, C.J.¹ Tsai, T.I.² Lin, H.C.³ Huang, T.Y.⁴ Chao, T.S.⁵

18
- 78649433160
- Y. Song, H. J. Zhou, Q. X. Xu, J. B. Niu, J. A. Yan, C. Zhao, H. C. Zhong, IEEE Electron Device Lett. 2010, 31, 1377.
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1377
- Song, Y.¹ Zhou, H.J.² Xu, Q.X.³ Niu, J.B.⁴ Yan, J.A.⁵ Zhao, C.⁶ Zhong, H.C.⁷

19
- 79953039939
- C. J. Su, T. I. Tsai, Y. L. Liou, Z. M. Lin, H. C. Lin, T. S. Chao, IEEE Electron Device Lett. 2011, 32, 521.
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 521
- Su, C.J.¹ Tsai, T.I.² Liou, Y.L.³ Lin, Z.M.⁴ Lin, H.C.⁵ Chao, T.S.⁶

20
- 84863837836
- Y. M. Niquet, C. Delerue, C. Krzeminski, Nano Lett. 2012, 12, 3545.
- (2012) Nano Lett. , vol.12 , pp. 3545
- Niquet, Y.M.¹ Delerue, C.² Krzeminski, C.³

21
- 33746210329
- B. Mereu, C. Rossel, E. P. Gusev, M. Yang, J. Appl. Phys. 2006, 100, 014504.
- (2006) J. Appl. Phys. , vol.100 , pp. 014504
- Mereu, B.¹ Rossel, C.² Gusev, E.P.³ Yang, M.⁴

22
- 79251579294
- A. Motayed, J. E. Bonevich, S. Krylyuk, A. V. Davydov, G. Aluri, M. V. Rao, Nanotechnology 2011, 22, 075206.
- (2011) Nanotechnology , vol.22 , pp. 075206
- Motayed, A.¹ Bonevich, J.E.² Krylyuk, S.³ Davydov, A.V.⁴ Aluri, G.⁵ Rao, M.V.⁶

23
- 0004005306
- Wiley, New York.
- S. M. Sze, K. K. Ng, Physics of semiconductor devices, Wiley, New York 2007.
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

24
- 34547255321
- R. Tu, L. Zhang, Y. Nishi, H. J. Dai, Nano Lett. 2007, 7, 1561.
- (2007) Nano Lett. , vol.7 , pp. 1561
- Tu, R.¹ Zhang, L.² Nishi, Y.³ Dai, H.J.⁴

25
- 0038161696
- Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, C. M. Lieber, Nano Lett. 2003, 3, 149.
- (2003) Nano Lett. , vol.3 , pp. 149
- Cui, Y.¹ Zhong, Z.H.² Wang, D.L.³ Wang, W.U.⁴ Lieber, C.M.⁵

26
- 34047259517
- M. T. Björk, O. Hayden, H. Schmid, H. Riel, W. Riess, Appl. Phys. Lett. 2007, 90, 142110.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 142110
- Björk, M.T.¹ Hayden, O.² Schmid, H.³ Riel, H.⁴ Riess, W.⁵

27
- 33744822492
- J. Goldberger, A. I. Hochbaum, R. Fan, P. D. Yang, Nano Lett. 2006, 6, 973.
- (2006) Nano Lett. , vol.6 , pp. 973
- Goldberger, J.¹ Hochbaum, A.I.² Fan, R.³ Yang, P.D.⁴

28
- 3142684485
- Y. Wu, J. Xiang, C. Yang, W. Lu, C. M. Lieber, Nature 2004, 430, 61.
- (2004) Nature , vol.430 , pp. 61
- Wu, Y.¹ Xiang, J.² Yang, C.³ Lu, W.⁴ Lieber, C.M.⁵

29
- 59849089910
- C. W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, J.-P. Colinge, Appl. Phys. Lett. 2009, 94, 053511.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 053511
- Lee, C.W.¹ Afzalian, A.² Akhavan, N.D.³ Yan, R.⁴ Ferain, I.⁵ Colinge, J.-P.⁶

30
- 1442360362
- J. P. Colinge, Solid-State Electron. 2004, 48, 897.
- (2004) Solid-State Electron. , vol.48 , pp. 897
- Colinge, J.P.¹

31
- 23444437920
- S. M. Koo, M. D. Edelstein, Q. Li, C. A. Richter, E. M. Vogel, Nanotechnology 2005, 16, 1482.
- (2005) Nanotechnology , vol.16 , pp. 1482
- Koo, S.M.¹ Edelstein, M.D.² Li, Q.³ Richter, C.A.⁴ Vogel, E.M.⁵

32
- 2942640234
- A. B. Greytak, L. J. Lauhon, M. S. Gudiksen, C. M. Lieber, Appl. Phys. Lett. 2004, 84, 4176.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4176
- Greytak, A.B.¹ Lauhon, L.J.² Gudiksen, M.S.³ Lieber, C.M.⁴

33
- 0042697357
- K. Roy, S. Mukhopadhyay, H. Mahmoodi-Meimand, Proc. IEEE 2003, 91, 305.
- (2003) Proc. IEEE , vol.91 , pp. 305
- Roy, K.¹ Mukhopadhyay, S.² Mahmoodi-Meimand, H.³

34
- 46049102044
- Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires
- 11-13 Dec.
- K. H. Yeo, S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Cho, K. H. Hong, S. K. Yun, M. S. Lee, N. Y. Cho, K. H. Lee, D. Y. Hwang, B. Y. Park, D. W. Kim, D. G. Park, B. I. Ryu, " Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires ", presented at 2006. Electron Devices Meeting, 2006. IEDM '06. International, 11-13 Dec.
- (2006) Electron Devices Meeting, 2006. IEDM '06. International
- Yeo, K.H.¹ Suk, S.D.² Li, M.³ Yeoh, Y.Y.⁴ Cho, K.H.⁵ Hong, K.H.⁶ Yun, S.K.⁷ Lee, M.S.⁸ Cho, N.Y.⁹ Lee, K.H.¹⁰ Hwang, D.Y.¹¹ Park, B.Y.¹² Kim, D.W.¹³ Park, D.G.¹⁴ Ryu, B.I.¹⁵

35
- 84866899832
- Simulation study of nanowire tunnel FETs
- 18-20 June
- A. Schenk, R. Rhyner, M. Luisier, C. Bessire, " Simulation study of nanowire tunnel FETs ", presented at 2012. Device Research Conference (DRC), 2012 70th Annual, 18-20 June
- (2012) Device Research Conference (DRC), 2012 70th Annual
- Schenk, A.¹ Rhyner, R.² Luisier, M.³ Bessire, C.⁴

36
- 84888183258
- J. Y. Oh, M. S. Islam, IEEE Trans. Nanotechnol. 2013, 12, 1173.
- (2013) IEEE Trans. Nanotechnol. , vol.12 , pp. 1173
- Oh, J.Y.¹ Islam, M.S.²

37
- 77949363529
- H. W. You, W. J. Cho, Appl. Phys. Lett. 2010, 96, 093506.
- (2010) Appl. Phys. Lett. , vol.96 , pp. 093506
- You, H.W.¹ Cho, W.J.²

38
- 79955383135
- M. F. Hung, Y. C. Wu, Z. Y. Tang, Appl. Phys. Lett. 2011, 98, 162108.
- (2011) Appl. Phys. Lett. , vol.98 , pp. 162108
- Hung, M.F.¹ Wu, Y.C.² Tang, Z.Y.³

39
- 84897107662
- S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, C. C. Ko, S. Yang, L. W. Feng, S. M. Sze, C. Y. Chang, C. H. Lien, Appl. Phys. Lett. 2007, 91.
- (2007) Appl. Phys. Lett. , vol.91
- Chen, S.C.¹ Chang, T.C.² Liu, P.T.³ Wu, Y.C.⁴ Ko, C.C.⁵ Yang, S.⁶ Feng, L.W.⁷ Sze, S.M.⁸ Chang, C.Y.⁹ Lien, C.H.¹⁰

40
- 84866080570
- S. H. Park, Y. Kim, W. Kim, J. Y. Seo, B. G. Park, Solid-State Electron. 2012, 78, 34.
- (2012) Solid-State Electron. , vol.78 , pp. 34
- Park, S.H.¹ Kim, Y.² Kim, W.³ Seo, J.Y.⁴ Park, B.G.⁵

41
- 85008006353
- W. W. Fang, N. Singh, L. K. Bera, H. S. Nguyen, S. C. Rustagi, G. Q. Lo, N. Balasubramanian, D. L. Kwong, IEEE Electron Device Lett. 2007, 28, 211.
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 211
- Fang, W.W.¹ Singh, N.² Bera, L.K.³ Nguyen, H.S.⁴ Rustagi, S.C.⁵ Lo, G.Q.⁶ Balasubramanian, N.⁷ Kwong, D.L.⁸

42
- 84869464643
- R. G. Huang, J. R. Heath, Small 2012, 8, 3417.
- (2012) Small , vol.8 , pp. 3417
- Huang, R.G.¹ Heath, J.R.²

43
- 43549116120
- J. Fu, N. Singh, K. D. Buddharaju, S. H. G. Teo, C. Shen, Y. Jiang, C. X. Zhu, M. B. Yu, G. Q. Lo, N. Balasubramanian, D. L. Kwong, E. Gnani, G. Baccarani, IEEE Electron Device Lett. 2008, 29, 518.
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 518
- Fu, J.¹ Singh, N.² Buddharaju, K.D.³ Teo, S.H.G.⁴ Shen, C.⁵ Jiang, Y.⁶ Zhu, C.X.⁷ Yu, M.B.⁸ Lo, G.Q.⁹ Balasubramanian, N.¹⁰ Kwong, D.L.¹¹ Gnani, E.¹² Baccarani, G.¹³

44
- 84856280225
- H. W. You, W. J. Cho, IEEE Electron Device Lett. 2012, 33, 170.
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 170
- You, H.W.¹ Cho, W.J.²

45
- 0000146687
- Y. P. Zhao, G. C. Wang, T. M. Lu, G. Palasantzas, J. T. M. De Hosson, Phys Rev B 1999, 60, 9157.
- (1999) Phys Rev B , vol.60 , pp. 9157
- Zhao, Y.P.¹ Wang, G.C.² Lu, T.M.³ Palasantzas, G.⁴ De Hosson, J.T.M.⁵

46
- 0032097823
- Y. B. Park, D. K. Schroder, IEEE Trans. Electron Devices 1998, 45, 1361.
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1361
- Park, Y.B.¹ Schroder, D.K.²

47
- 46049092015
- Dual-gate silicon nanowire transistors with nickel silicide contacts
- 11-13 Dec.
- J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter, S. Guha, " Dual-gate silicon nanowire transistors with nickel silicide contacts ", presented at 2006. Electron Devices Meeting, 2006. IEDM '06. International, 11-13 Dec.
- (2006) Electron Devices Meeting, 2006. IEDM '06. International
- Appenzeller, J.¹ Knoch, J.² Tutuc, E.³ Reuter, M.⁴ Guha, S.⁵

48
- 33744540414
- I. Kimukin, M. S. Islam, R. S. Williams, Nanotechnology 2006, 17, S240.
- (2006) Nanotechnology , vol.17
- Kimukin, I.¹ Islam, M.S.² Williams, R.S.³

49
- 84864697454
- K. Tomioka, M. Yoshimura, T. Fukui, Nature 2012, 488, 189.
- (2012) Nature , vol.488 , pp. 189
- Tomioka, K.¹ Yoshimura, M.² Fukui, T.³

50
- 33847049888
- S. A. Dayeh, D. P. R. Aplin, X. T. Zhou, P. K. L. Yu, E. T. Yu, D. L. Wang, Small 2007, 3, 326.
- (2007) Small , vol.3 , pp. 326
- Dayeh, S.A.¹ Aplin, D.P.R.² Zhou, X.T.³ Yu, P.K.L.⁴ Yu, E.T.⁵ Wang, D.L.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.