High electron mobility InAs nanowire field-effect transistors

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Volumn 3, Issue 2, 2007, Pages 326-332

  Dayeh, Shadi A ^a   Aplin, David P R ^a   Zhou, Xiaotian ^a   Yu, Paul K L ^a   Yu, Edward T ^a   Wang, Deli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electron mobility; Field effect transistors; Nanoelectronics; Nanowires

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; INDIUM; NANOSTRUCTURED MATERIALS; SINGLE CRYSTALS;

INTERFACE STATE CAPACITANCE; METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NANOELECTRONICS; NANOWIRES;

FIELD EFFECT TRANSISTORS;

INDIUM; INDIUM ARSENIDE; NANOMATERIAL; NANOTUBE; ORGANOARSENIC DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS;

EID: 33847049888     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200600379     Document Type: Article

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