Silicon nanowire charge-trap memory incorporating self-assembled iron oxide quantum dots

Small

Volumn 8, Issue 22, 2012, Pages 3417-3421

  Huang, Ruo Gu ^a,b   Heath, James R ^a  

^a California Institute of Technology   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

Fowler Nordheim tunneling; non volatile memory devices; self assembly; semiconductor quantum dots; silicon nanowires

Indexed keywords

ASSEMBLY YIELDS; CHARGE TRAP; FOWLER-NORDHEIM TUNNELING; MEMORY PERFORMANCE; NONVOLATILE MEMORY DEVICES; ORDERED ARRAY; PRECISE INTEGRATION; QUANTUM-DOT SIZE; SELF-ASSEMBLED; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; STORAGE ELEMENTS; STORED CHARGE;

DATA STORAGE EQUIPMENT; IRON OXIDES; NANOWIRES; SELF ASSEMBLY; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84869464643     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201200940     Document Type: Article

References (32)

1. International Technology Roadmap for Semiconductors. http://www.itrs.net/ links/2009itrs/home2009.htm, accessed: August, 2012.
2. S.-W. Ryu, J.-W. Lee, J.-W. Han, S. Kim, Y.-K. Choi, IEEE Trans. Electron Devices 2009, 56, 377.
3. M. H. White, D. A. Adams, J. K. Bu, IEEE Circuits Devices Mag. 2000, 16, 22.
4. C.-W. Luo, H.-C. Lin, K.-H. Lee, W.-C. Chen, H.-H. Hsu, T.-Y. Huang, IEEE Trans. Electron Devices 2011, 58, 1879.
5. J. D. Lee, S. H. Hur, J. D. Choi, IEEE Electron Device Lett. 2002, 23, 264.
6. D. Kang, S. Jang, K. Lee, J. Kim, H. Kwon, W. Lee, B.-G. Park, J. D. Lee, H. Shin, in 2006 IEEE Int. Electron Devices Meet., IEEE, San Francisco, USA 2006, 744.
7. P. K. Singh, G. Bisht, R. Hofmann, K. Singh, N. Krishna, S. Mahapatra, IEEE Electron Device Lett. 2008, 29, 1389.
8. Z. T. Liu, C. Lee, V. Narayanan, G. Pei, E. C. Kan, IEEE Trans. Electron Devices 2002, 49, 1606.
9. S. J. Shen, C. J. Lin, C. C. H. Hsu, in 1996 IEEE Int. Electron Devices Meet., IEEE, San Francisco, USA, 1996, 515.
10. T. Lee, S. K. Banerjee, J. Vac. Sci. Technol., B 2010, 28, 1005.
11. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, D. Buchanan, in 1995 IEEE Int. Electron Devices Meet., IEEE, Washington, USA 1995, p. 521.
12. P.-Y. Kuo, T.-S. Chao, J.-S. Huang, T.-F. Lei, IEEE Electron Device Lett. 2009, 30, 234.
13. J.-S. Lee, J. Cho, C. Lee, I. Kim, J. Park, Y.-M. Kim, H. Shin, J. Lee, F. Caruso, Nat. Nanotechnol. 2007, 2, 790.
14. J. S. Lee, J. Y. Yang, J. P. Hong, Appl. Phys. Lett. 2009, 95.
15. J. Seo, T. Lee, Jpn. J. Appl. Phys. 2010, 49.
16. J.-S. Lee, Y.-M. Kim, J.-H. Kwon, H. Shin, B.-H. Sohn, J. Lee, Adv. Mater. 2009, 21, 178.
17. D.-Y. Jeong, K. Keem, B. Park, K. Cho, S. Kim, IEEE Trans. Nanotechnol. 2009, 8, 650.
18. C. J. Yoon, D. H. Yeom, D. Y. Jeong, M. G. Lee, B. M. Moon, S. S. Kim, C. Y. Choi, S. M. Koo, J. Appl. Phys. 2009, 105.
19. R.-G. Huang, D. Tham, D. Wang, J. Heath, Nano Res. 2011, 4, 1005.
20. K. I. Seo, S. Sharma, A. A. Yasseri, D. R. Stewart, T. I. Kamins, Electrochem. Solid-State Lett. 2006, 9, G69.
21. M. J. H. van Dal, N. Collaert, G. Doornbos, G. Vellianitis, G. Curatola, B. J. Pawlak, R. Duffy, C. Jonville, B. Degroote, E. Altamirano, E. Kunnen, M. Demand, S. Beckx, T. Vandeweyer, C. Delvaux, F. Leys, A. Hikavyy, R. Rooyackers, M. Kaiser, R. G. R. Weemaes, S. Biesemans, M. Jurczak, K. Anil, L. Witters, R. J. P. Larder, in 2007 Symp. VLSI Technol., Dig. Tech. Pap., Japan Society of Applied Physics, Kyoto, Japan 2007, 110.
22. C. A. Richter, H. D. Xiong, X. Zhu, W. Wang, V. M. Stanford, W.-K. Hong, T. Lee, D. E. Loannou, Q. Li, IEEE Trans. Electron Devices 2008, 55, 3086.
23. J. J. Lee, X. G. Wang, W. P. Bai, N. Lu, D. L. Kwong, IEEE Trans. Electron Devices 2003, 50, 2067.
24. Y. M. Cai, R. Huang, X. N. Shan, Y. Li, F. L. Zhou, Y. Y. Wang, Semicond. Sci. Technol. 2006, 21, 507.
25. K. Xu, L. Qin, J. R. Heath, Nat. Nanotechnol. 2009, 4, 368.
26. Y. N. Xia, Y. D. Yin, Y. Lu, J. McLellan, Adv. Funct. Mater. 2003, 13, 907.
27. Y. Cui, M. T. Bjork, J. A. Liddle, C. Sonnichsen, B. Boussert, A. P. Alivisatos, Nano Lett. 2004, 4, 1093.
28. S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, USA 1981.
29. Y. L. Yang, M. H. White, Solid-State Electron. 2000, 44, 949.
30. F.-C. Chiu, J. Appl. Phys. 2006, 100.
31. K. Yamada, S. Yoshii, S. Kumagai, A. Miura, Y. Uraoka, T. Fuyuki, I. Yamashita, Jpn. J. Appl. Phys., Part 1 2007, 46, 7459.
32. J. J. Welser, S. Tiwari, S. Rishton, K. Y. Lee, Y. Lee, IEEE Electron. Device Lett. 1997, 18, 278