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Volumn 98, Issue 16, 2011, Pages

High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

Author keywords

[No Author keywords available]

Indexed keywords

GATE-ALL-AROUND; NON-VOLATILE MEMORIES; POLY-CRYSTALLINE SILICON; POLY-SI; POLYCRYSTALLINE SILICON (POLY-SI); PROGRAM/ERASE; SILICON NANOCRYSTALS; STORAGE NODES; THRESHOLD VOLTAGE SHIFTS;

EID: 79955383135     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3582925     Document Type: Article
Times cited : (49)

References (18)
  • 5
    • 42549134015 scopus 로고    scopus 로고
    • Two-bit effect of trigate nanowires polycrystalline silicon thin-film-transistor nonvolatile memory with oxide/nitride/oxide gate dielectrics
    • DOI 10.1063/1.2910460
    • Y. C. Wu, M. F. Hung, C. W. Chang, and P. W. Su, Appl. Phys. Lett. 0003-6951 92, 163506 (2008). 10.1063/1.2910460 (Pubitemid 351590751)
    • (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 163506
    • Wu, Y.-C.1    Hung, M.-F.2    Chang, C.-W.3    Su, P.-W.4
  • 10
    • 65449154441 scopus 로고    scopus 로고
    • 0021-8979, 10.1063/1.3110183
    • B. Li and J. Liu, J. Appl. Phys. 0021-8979 105, 084905 (2009). 10.1063/1.3110183
    • (2009) J. Appl. Phys. , vol.105 , pp. 084905
    • Li, B.1    Liu, J.2
  • 13
    • 17044377788 scopus 로고    scopus 로고
    • Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
    • DOI 10.1063/1.1868077, 073114
    • J. H. Chen, W. J. Yoo, D. S. H. Chan, and L. J. Tang, Appl. Phys. Lett. 0003-6951 86, 073114 (2005). 10.1063/1.1868077 (Pubitemid 40495398)
    • (2005) Applied Physics Letters , vol.86 , Issue.7 , pp. 1-3
    • Chen, J.H.1    Yoo, W.J.2    Chan, D.S.H.3    Tang, L.-J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.