Correlation between the performance and microstructure of Ti/Al/Ti/Au ohmic contacts to p-type silicon nanowires

Nanotechnology

Volumn 22, Issue 7, 2011, Pages

  Motayed, Abhishek ^a,b   Bonevich, John E ^a   Krylyuk, Sergiy ^a   Davydov, Albert V ^a   Aluri, Geetha ^c   Rao, Mulpuri V ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c George Mason University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT FORMATION; CONTACT REGIONS; ELECTRICAL CHARACTERISTIC; INERT ATMOSPHERES; KIRKENDALL VOID; LOW RESISTANCE; METAL CONTACTS; METAL/SEMICONDUCTOR INTERFACE; METALLIZATIONS; MICROSTRUCTURAL ASPECTS; MICROSTRUCTURAL CHARACTERISTICS; NANO SCALE; OUT-DIFFUSION; P-TYPE SI; P-TYPE SILICON; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TEMPERATURE RANGE; TITANIUM SILICIDE;

ANNEALING; FIELD EFFECT TRANSISTORS; METAL WORKING; MICROSTRUCTURE; NANOWIRES; OHMIC CONTACTS; SILICIDES; SILICON; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC WIRE;

EID: 79251579294     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/7/075206     Document Type: Article

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