Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures

Nature

Volumn 430, Issue 6995, 2004, Pages 61-65

  Wu, Yue ^a   Xiang, Jie ^a   Yang, Chen ^a   Lu, Wei ^a   Lieber, Charles M ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SILICON; SINGLE CRYSTALS;

HYBRID ELECTRONICS; NANOWIRES;

HETEROJUNCTIONS;

NICKEL SILICIDE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

PHYSICS;

ARTICLE; CRYSTAL; ELECTRON TRANSPORT; NANOTECHNOLOGY; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 3142684485     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02674     Document Type: Article

References (21)

1. Yao, Z., Dekker, C. & Avouris, Ph. Electrical transport through single-wall carbon nanotubes. Top. Appl. Phys. 80, 147-171 (2001).
2. McEuen, P. L., Fuhrer, M. S. & Park, H. Single-walled carbon nanotube electronics. IEEE Trans. Nanotechnol. 1, 78-85 (2002).
3. Dai, H. Carbon nanotubes: synthesis, integration, and properties. Acc. Chem. Res. 35, 1035-1044 (2002).
4. Lieber, C. M. Nanoscale science and technology: Building a big future from small things MRS Bull. 28, 486-491 (2003).
5. Lieber, C. M. The incredible shrinking circuit. Sci. Am. 285, 58-64 (2001).
6. Cui, Y., Zhong, Z., Wang, D., Wang, W. U. & Lieber, C. M. High performance silicon nanowire field effect transistors. Nano Lett. 3, 149-152 (2003).
7. Javey, A., Guo, J., Wang, Q., Lundstrom, M. & Dai, H. Ballistic carbon nanotube field-effect transistors. Nature 424, 654-657 (2003).
8. Heinze, S. et al. Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89, 106801 (2002).
9. Morimoto, T. et al. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI. IEEE Trans. Electron Devices 42, 915-922 (1995).
10. Cui, Y., Lauhon, L. J., Gudiksen, M. S., Wang, J. & Lieber, C. M. Diameter-controlled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78, 2214-2216 (2001).
11. Wu, Y. et al. Controlled growth and structures of molecular-scale silicon nanowires. Nano Lett. 4, 433-436 (2004).
12. Toman, K. The structure of NiSi. Acta Crystallogr. 4, 462-464 (1951).
13. Meyer, B. et al. Intrinsic properties of NiSi. J. Alloys Compounds 262/263, 235-237 (1997).
14. Pierce, D. G. & Brusius, P. G. Electromigration: a review. Microelectron. Reliab. 37, 1053-1072 (1997).
15. Yao, Z., Kane, C. L. & Dekker, C. High-field electrical transport in single-wall carbon nanotubes. Phys. Rev. Lett. 84, 2941-2944 (2000).
16. International Technology Roadmap for Semiconductors 2003 edn (http://public.itrs.net/Files/ 2003ITRS/Interconnect2003.pdf) (2003).
17. Sze, S. M. Physics of Semiconductor Devices 438-445 (John Wiley & Sons, New York, 1981).
18. Huang, Y., Duan, X., Wei, Q. & Lieber, C. M. Directed assembly of one-dimensional nanostructures into functional networks. Science 291, 630-633 (2001).
19. Chau, R. et al. Silicon nano-transistors for logic applications. Physica E 19, 1-5 (2003).
20. Whang, D., Jin, S., Wu, Y. & Lieber, C. M. Large-scale hierarchical organization of nanowire arrays for integrated nanosystems. Nano Lett. 3, 1255-1259 (2003).
21. Lauhon, L. J., Gudiksen, M. S., Wang, D. & Lieber, C. M. Epitaxial core-shell and core-multishell nanowire heterostructures. Nature 420, 57-61 (2002).