Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition

Nanotechnology

Volumn 17, Issue 11, 2006, Pages

  Kimukin, I ^a   Islam, M Saif ^a   Williams, R Stanley ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CATALYSIS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ETCHING; HIGH TEMPERATURE EFFECTS; SEGREGATION (METALLOGRAPHY); SILICON; WIRE;

CHEMICAL ETCHANT; NANOWIRES; RADIAL DOPANT; SURFACE CHARGE DENSITY; SURFACE DEPLETION THICKNESS;

NANOSTRUCTURED MATERIALS;

EID: 33744540414     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/11/S03     Document Type: Article

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