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Nanoscale

Volumn 5, Issue 6, 2013, Pages 2437-2441

Vertical nanowire array-based field effect transistors for ultimate scaling

(2) Larrieu, G a Han, X L b

a UNIVERSITÉ DE TOULOUSE (France)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; ELECTROSTATIC CONTROL; GATE-ALL-AROUND; HIGH RESOLUTION; LOW POWER; LOW-LEAKAGE CURRENT; MASSIVELY PARALLELS; METALLIC GATES; NANOMETER GATES; PROPOSED ARCHITECTURES; SHORT-CHANNEL EFFECT; SILICON ELECTRONICS; TRANSISTOR SIZE; VERTICAL NANOWIRE ARRAYS; VERTICAL NANOWIRES;

FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; POWER ELECTRONICS; SILICIDES;

NANOWIRES;

EID: 84874611144 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr33738c Document Type: Article

Times cited : (146)

References (29)

1
- 81555220119
- I. Ferain C. Colinge J.-P. Colinge Nature 2011 479 310 316
- (2011) Nature , vol.479 , pp. 310-316
- Ferain, I.¹ Colinge, C.² Colinge, J.-P.³

2
- 79958038168
- K. J. Kuhn Microelectron. Eng. 2011 88 1044 1049
- (2011) Microelectron. Eng. , vol.88 , pp. 1044-1049
- Kuhn, K.J.¹

3
- 84874586244
- article ID 492121
- D.-L. Kwong X. Li Y. Sun G. Ramanathan Z. X. Chen S. M. Wong Y. Li N. S. Shen K. Buddharaju Y. H. Yu S. J. Lee N. Singh G. Q. Lo J. Nanotechnol. 2012 2012
- (2012) J. Nanotechnol. , vol.2012
- Kwong, D.-L.¹ Li, X.² Sun, Y.³ Ramanathan, G.⁴ Chen, Z.X.⁵ Wong, S.M.⁶ Li, Y.⁷ Shen, N.S.⁸ Buddharaju, K.⁹ Yu, Y.H.¹⁰ Lee, S.J.¹¹ Singh, N.¹² Lo, G.Q.¹³

4
- 9644275315
- Y. Shan A. K. Kalkan C. Y. Peng S. J. Fonash Nano Lett. 2004 4 2085 2089
- (2004) Nano Lett. , vol.4 , pp. 2085-2089
- Shan, Y.¹ Kalkan, A.K.² Peng, C.Y.³ Fonash, S.J.⁴

5
- 0034824859
- Y. Huang X. F. Duan Q. Q. Wei C. M. Lieber Science 2001 291 630 633
- (2001) Science , vol.291 , pp. 630-633
- Huang, Y.¹ Duan, X.F.² Wei, Q.Q.³ Lieber, C.M.⁴

6
- 0000064757
- P. A. Smith C. D. Nordquist T. N. Jackson T. S. Mayer Appl. Phys. Lett. 2000 77 1399 1401
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1399-1401
- Smith, P.A.¹ Nordquist, C.D.² Jackson, T.N.³ Mayer, T.S.⁴

7
- 84874599618
- T. Ernst, C. Dupre, C. Isheden, E. Bernard, R. Ritzenthaler, V. Maffini-Alvaro, J. C. Barbe, F. De Crecy, A. Toffoli, C. Vizioz, S. Borel, F. Andrieu, V. Delaye, D. Lafond, G. Rabille, J. M. Hartmann, M. Rivoire, B. Guillaumot, A. Suhm, P. Rivallin, O. Faynot, G. Ghibaudo and S. Deleonibus, Intl. Electron Devices Meeting Tech. Dig., 2006, 663-666
- (2006) Intl. Electron Devices Meeting Tech. Dig. , pp. 663-666
- Ernst, T.¹ Dupre, C.² Isheden, C.³ Bernard, E.⁴ Ritzenthaler, R.⁵ Maffini-Alvaro, V.⁶ Barbe, J.C.⁷ De Crecy, F.⁸ Toffoli, A.⁹ Vizioz, C.¹⁰ Borel, S.¹¹ Andrieu, F.¹² Delaye, V.¹³ Lafond, D.¹⁴ Rabille, G.¹⁵ Hartmann, J.M.¹⁶ Rivoire, M.¹⁷ Guillaumot, B.¹⁸ Suhm, A.¹⁹ Rivallin, P.²⁰ more..

8
- 79957621507
- Y. Sun et al. IEEE Electron Device Lett. 2011 32 725 727
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 725-727
- Sun, Y.¹

9
- 84864697454
- K. Tomioka M. Yoshimura T. Fukui Nature 2012 488 189 192
- (2012) Nature , vol.488 , pp. 189-192
- Tomioka, K.¹ Yoshimura, M.² Fukui, T.³

10
- 77949445771
- M. Egard S. Johansson A. C. Johansson K. M. Persson A. W. Dey B. M. Borg C. Thelander L. E. Wernersson E. Lind Nano Lett. 2010 10 809 812
- (2010) Nano Lett. , vol.10 , pp. 809-812
- Egard, M.¹ Johansson, S.² Johansson, A.C.³ Persson, K.M.⁴ Dey, A.W.⁵ Borg, B.M.⁶ Thelander, C.⁷ Wernersson, L.E.⁸ Lind, E.⁹

11
- 40749151146
- C. Thelander L. E. Froberg C. Rehnstedt L. Samuelson L.-E. Wernersson IEEE Electron Device Lett. 2008 29 206 208
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 206-208
- Thelander, C.¹ Froberg, L.E.² Rehnstedt, C.³ Samuelson, L.⁴ Wernersson, L.-E.⁵

12
- 32044458180
- V. Schmidt H. Riel S. Senz S. Karg W. Riess U. Gösele Small 2006 2 85 88
- (2006) Small , vol.2 , pp. 85-88
- Schmidt, V.¹ Riel, H.² Senz, S.³ Karg, S.⁴ Riess, W.⁵ Gösele, U.⁶

13
- 79958051856
- S. Johansson S. Ghalamestani M. Borg E. Lind L. E. Wernersson Microelectron. Eng. 2011 88 1105 1108
- (2011) Microelectron. Eng. , vol.88 , pp. 1105-1108
- Johansson, S.¹ Ghalamestani, S.² Borg, M.³ Lind, E.⁴ Wernersson, L.E.⁵

14
- 79960060960
- X. L. Han G. Larrieu P. F. Fazzini E. Dubois Microelectron. Eng. 2011 88 2622 2624
- (2011) Microelectron. Eng. , vol.88 , pp. 2622-2624
- Han, X.L.¹ Larrieu, G.² Fazzini, P.F.³ Dubois, E.⁴

15
- 21544449825
- H. Liu D. Biegelsen F. Ponce N. Johnson R. Pease Appl. Phys. Lett. 1994 64 1383 1386
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1383-1386
- Liu, H.¹ Biegelsen, D.² Ponce, F.³ Johnson, N.⁴ Pease, R.⁵

16
- 58449093572
- K. Tomioka J. Motohisa S. Hara T. Fukui Nano Lett. 2008 8 3475 3480
- (2008) Nano Lett. , vol.8 , pp. 3475-3480
- Tomioka, K.¹ Motohisa, J.² Hara, S.³ Fukui, T.⁴

17
- 34547268597
- J. Ramos, E. Augendre, A. Kottantharayil, A. Mercha, E. Simoen, M. Rosmeulen, S. Severi, C. Kerner, T. Chiarella, A. Nackaerts, I. Ferain, T. Hoffmann, M. Jurczak and S. Biesemans, et al., International Conference on Solid-state and Integrated Circuit Technology, 2006, 72-74
- (2006) International Conference on Solid-state and Integrated Circuit Technology , pp. 72-74
- Ramos, J.¹ Augendre, E.² Kottantharayil, A.³ Mercha, A.⁴ Simoen, E.⁵ Rosmeulen, M.⁶ Severi, S.⁷ Kerner, C.⁸ Chiarella, T.⁹ Nackaerts, A.¹⁰ Ferain, I.¹¹ Hoffmann, T.¹² Jurczak, M.¹³ Biesemans, S.¹⁴

18
- 84874621278
- P. Packan, S. Cea, H. Deshpande, T. Ghani, M. Giles, O. Golonzka, M. Hattendorf, R. Kotlyar, K. Kuhn, A. Murthy, P. Ranade, L. Shifren, C. Weber and K. Zawadzki, Intl. Electron Devices Meeting Tech. Dig., 2008, 66-69
- (2008) Intl. Electron Devices Meeting Tech. Dig. , pp. 66-69
- Packan, P.¹ Cea, S.² Deshpande, H.³ Ghani, T.⁴ Giles, M.⁵ Golonzka, O.⁶ Hattendorf, M.⁷ Kotlyar, R.⁸ Kuhn, K.⁹ Murthy, A.¹⁰ Ranade, P.¹¹ Shifren, L.¹² Weber, C.¹³ Zawadzki, K.¹⁴

19
- 84863837836
- Y.-M. Niquet C. Delerue C. Krzeminski Nano Lett. 2012 12 3545 3550
- (2012) Nano Lett. , vol.12 , pp. 3545-3550
- Niquet, Y.-M.¹ Delerue, C.² Krzeminski, C.³

20
- 0034453418
- J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T.-J. King and C. Hu, Intl. Electron Devices Meeting Tech. Dig., 2000, 57-60
- (2000) Intl. Electron Devices Meeting Tech. Dig. , pp. 57-60
- Kedzierski, J.¹ Xuan, P.² Anderson, E.H.³ Bokor, J.⁴ King, T.-J.⁵ Hu, C.⁶

21
- 57049086917
- G. Larrieu E. Dubois D. Yarekha N. Breil N. Reckinger X. Tang J. Ratajczak A. Laszcz Mater. Sci. Eng., B 2008 154-155 159 162
- (2008) Mater. Sci. Eng., B , vol.154-155 , pp. 159-162
- Larrieu, G.¹ Dubois, E.² Yarekha, D.³ Breil, N.⁴ Reckinger, N.⁵ Tang, X.⁶ Ratajczak, J.⁷ Laszcz, A.⁸

22
- 79957606231
- G. Larrieu E. Dubois IEEE Electron Device Lett. 2011 32 728 730
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 728-730
- Larrieu, G.¹ Dubois, E.²

23
- 77949275137
- J.-P. Colinge C. Chi-Woo Lee A. Afzalian N. Akhavan Y. Yan I. Ferain P. Razavi B. O'Neill A. Blake M. White A. Kelleher B. McCarthy R. Murphy Nat. Nanotechnol. 2010 5 225 229
- (2010) Nat. Nanotechnol. , vol.5 , pp. 225-229
- Colinge, J.-P.¹ Chi-Woo Lee, C.² Afzalian, A.³ Akhavan, N.⁴ Yan, Y.⁵ Ferain, I.⁶ Razavi, P.⁷ O'Neill, B.⁸ Blake, A.⁹ White, M.¹⁰ Kelleher, A.¹¹ McCarthy, B.¹² Murphy, R.¹³

24
- 0031079417
- C. P. Auth J. D. Plummer IEEE Electron Device Lett. 1997 18 74 76
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 74-76
- Auth, C.P.¹ Plummer, J.D.²

25
- 80053573929
- S. Gundapaneni S. Ganguly A. Kottantharayil IEEE Electron Device Lett. 2011 32 1325 1327
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1325-1327
- Gundapaneni, S.¹ Ganguly, S.² Kottantharayil, A.³

26
- 84866597629
- X. Wang, A. Brown, B. Cheng, A. Asenov, Intl. Electron Devices Meeting Tech. Dig., 2011, 103-106
- (2011) Intl. Electron Devices Meeting Tech. Dig. , pp. 103-106
- Wang, X.¹ Brown, A.² Cheng, B.³ Asenov, A.⁴

27
- 0004071496
- Wiley, New York, 2nd edn
- D. K. Schroeder, Semiconductor material and device characterization, Wiley, New York, 2nd edn, 1998
- (1998) Semiconductor Material and Device Characterization
- Schroeder, D.K.¹

28
- 84858333987
- X. L. Han G. Larrieu E. Dubois F. Cristiano Surf. Sci. 2012 606 836 839
- (2012) Surf. Sci. , vol.606 , pp. 836-839
- Han, X.L.¹ Larrieu, G.² Dubois, E.³ Cristiano, F.⁴

29
- 81555207228
- A. M. Ionescu H. Riel Nature 2011 479 329 337
- (2011) Nature , vol.479 , pp. 329-337
- Ionescu, A.M.¹ Riel, H.²

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